Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnorm...
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doaj-a2edec39f551443585d2e3a9a58f0a4a2021-03-29T18:43:28ZengIEEEIEEE Journal of the Electron Devices Society2168-67342016-01-014171010.1109/JEDS.2015.24935617302517Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide SubstrateSeok-Woo Lee0Chang Bum Park1Pyo Jin Jeon2Sung-Wook Min3June Yeong Lim4Han Sol Lee5Jae-Sung Yoo6Soon Sung Yoo7Seongil Im8Research and Development Center, LG Display, Paju, KoreaResearch and Development Center, LG Display, Paju, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaResearch and Development Center, LG Display, Paju, KoreaResearch and Development Center, LG Display, Paju, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaWe report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.https://ieeexplore.ieee.org/document/7302517/Thin-film transistor (TFT),LTPSself-heating effecthot carrier effectpolyimide (PI)flexible |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Seok-Woo Lee Chang Bum Park Pyo Jin Jeon Sung-Wook Min June Yeong Lim Han Sol Lee Jae-Sung Yoo Soon Sung Yoo Seongil Im |
spellingShingle |
Seok-Woo Lee Chang Bum Park Pyo Jin Jeon Sung-Wook Min June Yeong Lim Han Sol Lee Jae-Sung Yoo Soon Sung Yoo Seongil Im Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate IEEE Journal of the Electron Devices Society Thin-film transistor (TFT), LTPS self-heating effect hot carrier effect polyimide (PI) flexible |
author_facet |
Seok-Woo Lee Chang Bum Park Pyo Jin Jeon Sung-Wook Min June Yeong Lim Han Sol Lee Jae-Sung Yoo Soon Sung Yoo Seongil Im |
author_sort |
Seok-Woo Lee |
title |
Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate |
title_short |
Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate |
title_full |
Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate |
title_fullStr |
Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate |
title_full_unstemmed |
Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate |
title_sort |
abnormal output characteristics of p-type low temperature polycrystalline silicon thin film transistor fabricated on polyimide substrate |
publisher |
IEEE |
series |
IEEE Journal of the Electron Devices Society |
issn |
2168-6734 |
publishDate |
2016-01-01 |
description |
We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed. |
topic |
Thin-film transistor (TFT), LTPS self-heating effect hot carrier effect polyimide (PI) flexible |
url |
https://ieeexplore.ieee.org/document/7302517/ |
work_keys_str_mv |
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