Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnorm...

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Main Authors: Seok-Woo Lee, Chang Bum Park, Pyo Jin Jeon, Sung-Wook Min, June Yeong Lim, Han Sol Lee, Jae-Sung Yoo, Soon Sung Yoo, Seongil Im
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/7302517/
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spelling doaj-a2edec39f551443585d2e3a9a58f0a4a2021-03-29T18:43:28ZengIEEEIEEE Journal of the Electron Devices Society2168-67342016-01-014171010.1109/JEDS.2015.24935617302517Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide SubstrateSeok-Woo Lee0Chang Bum Park1Pyo Jin Jeon2Sung-Wook Min3June Yeong Lim4Han Sol Lee5Jae-Sung Yoo6Soon Sung Yoo7Seongil Im8Research and Development Center, LG Display, Paju, KoreaResearch and Development Center, LG Display, Paju, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaResearch and Development Center, LG Display, Paju, KoreaResearch and Development Center, LG Display, Paju, KoreaInstitute of Physics and Applied Physics, Yonsei University, Seoul, KoreaWe report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.https://ieeexplore.ieee.org/document/7302517/Thin-film transistor (TFT),LTPSself-heating effecthot carrier effectpolyimide (PI)flexible
collection DOAJ
language English
format Article
sources DOAJ
author Seok-Woo Lee
Chang Bum Park
Pyo Jin Jeon
Sung-Wook Min
June Yeong Lim
Han Sol Lee
Jae-Sung Yoo
Soon Sung Yoo
Seongil Im
spellingShingle Seok-Woo Lee
Chang Bum Park
Pyo Jin Jeon
Sung-Wook Min
June Yeong Lim
Han Sol Lee
Jae-Sung Yoo
Soon Sung Yoo
Seongil Im
Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
IEEE Journal of the Electron Devices Society
Thin-film transistor (TFT),
LTPS
self-heating effect
hot carrier effect
polyimide (PI)
flexible
author_facet Seok-Woo Lee
Chang Bum Park
Pyo Jin Jeon
Sung-Wook Min
June Yeong Lim
Han Sol Lee
Jae-Sung Yoo
Soon Sung Yoo
Seongil Im
author_sort Seok-Woo Lee
title Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
title_short Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
title_full Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
title_fullStr Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
title_full_unstemmed Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate
title_sort abnormal output characteristics of p-type low temperature polycrystalline silicon thin film transistor fabricated on polyimide substrate
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2016-01-01
description We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.
topic Thin-film transistor (TFT),
LTPS
self-heating effect
hot carrier effect
polyimide (PI)
flexible
url https://ieeexplore.ieee.org/document/7302517/
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