Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations
Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. However, there are fundamental limits to the 2D planar structured complementary logic circuits, such as a large dimension a...
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doaj-a374e0a2b02844e99d16e07fec40ef922020-11-25T01:50:24ZengMDPI AGMaterials1996-19442019-11-011223381510.3390/ma12233815ma12233815Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor OperationsHyo-Jun Joo0Min-Gyu Shin1Hwan-Seok Jung2Hyun-Seok Cha3Donguk Nam4Hyuck-In Kwon5School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaSchool of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, SingaporeSchool of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, KoreaNumerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. However, there are fundamental limits to the 2D planar structured complementary logic circuits, such as a large dimension and a large parasitic resistance. This work demonstrated a vertically stacked three-dimensional complementary inverter composed of a p-channel tin monoxide (SnO) TFT and an n-channel indium-gallium-zinc oxide (IGZO) TFT. A bottom-gate p-channel SnO TFT was formed on the top-gate n-channel IGZO TFT with a shared common gate electrode. The fabricated vertically stacked complementary inverter exhibited full swing characteristics with a voltage gain of ~33.6, a high noise margin of 3.13 V, and a low noise margin of 3.16 V at a supplied voltage of 10 V. The achieved voltage gain of the fabricated complementary inverter was higher than that of the vertically stacked complementary inverters composed of other oxide TFTs in previous works. In addition, we showed that the vertically stacked complementary inverter exhibited excellent visible-light photoresponse. This indicates that the oxide TFT-based vertically stacked complementary inverter can be used as a sensitive photo-sensor operating in the visible spectral range with the voltage read-out scheme.https://www.mdpi.com/1996-1944/12/23/3815oxide tftvertically stacked complementary logic invertersnoigzophoto-sensor |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hyo-Jun Joo Min-Gyu Shin Hwan-Seok Jung Hyun-Seok Cha Donguk Nam Hyuck-In Kwon |
spellingShingle |
Hyo-Jun Joo Min-Gyu Shin Hwan-Seok Jung Hyun-Seok Cha Donguk Nam Hyuck-In Kwon Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations Materials oxide tft vertically stacked complementary logic inverter sno igzo photo-sensor |
author_facet |
Hyo-Jun Joo Min-Gyu Shin Hwan-Seok Jung Hyun-Seok Cha Donguk Nam Hyuck-In Kwon |
author_sort |
Hyo-Jun Joo |
title |
Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations |
title_short |
Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations |
title_full |
Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations |
title_fullStr |
Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations |
title_full_unstemmed |
Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations |
title_sort |
oxide thin-film transistor-based vertically stacked complementary inverter for logic and photo-sensor operations |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2019-11-01 |
description |
Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. However, there are fundamental limits to the 2D planar structured complementary logic circuits, such as a large dimension and a large parasitic resistance. This work demonstrated a vertically stacked three-dimensional complementary inverter composed of a p-channel tin monoxide (SnO) TFT and an n-channel indium-gallium-zinc oxide (IGZO) TFT. A bottom-gate p-channel SnO TFT was formed on the top-gate n-channel IGZO TFT with a shared common gate electrode. The fabricated vertically stacked complementary inverter exhibited full swing characteristics with a voltage gain of ~33.6, a high noise margin of 3.13 V, and a low noise margin of 3.16 V at a supplied voltage of 10 V. The achieved voltage gain of the fabricated complementary inverter was higher than that of the vertically stacked complementary inverters composed of other oxide TFTs in previous works. In addition, we showed that the vertically stacked complementary inverter exhibited excellent visible-light photoresponse. This indicates that the oxide TFT-based vertically stacked complementary inverter can be used as a sensitive photo-sensor operating in the visible spectral range with the voltage read-out scheme. |
topic |
oxide tft vertically stacked complementary logic inverter sno igzo photo-sensor |
url |
https://www.mdpi.com/1996-1944/12/23/3815 |
work_keys_str_mv |
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