Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays
Abstract In this paper, we introduce hemiellipsoid- and inverted hemiellipsoid-modified semiconductor nanowire (NW) optical structures, and present a systematic investigation on light management of the corresponding arrays based on GaAs. It is found that the modification makes well utilization of li...
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doaj-a4f6dec7b2cc445ea360a702df90b57d2020-11-24T21:25:00ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2018-08-011311810.1186/s11671-018-2659-2Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire ArraysXinyu Chen0Jiang Wang1Pengfei Shao2Qiming Liu3Dequan Liu4Qiang Chen5Yali Li6Junshuai Li7Deyan He8National and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, and School of Physical Science and Technology, Lanzhou UniversityNational and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, and School of Physical Science and Technology, Lanzhou UniversityNational and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, and School of Physical Science and Technology, Lanzhou UniversityNational and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, and School of Physical Science and Technology, Lanzhou UniversityNational and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, and School of Physical Science and Technology, Lanzhou UniversityInstitute of Electromagnetics and Acoustics, Department of Electronic Science, and Fujian Provincial Key Laboratory of Plasma and Magnetic Resonance, Xiamen UniversityNational and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, and School of Physical Science and Technology, Lanzhou UniversityNational and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, and School of Physical Science and Technology, Lanzhou UniversityNational and Local Joint Engineering Laboratory for Optical Conversion Materials and Technology, Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, and School of Physical Science and Technology, Lanzhou UniversityAbstract In this paper, we introduce hemiellipsoid- and inverted hemiellipsoid-modified semiconductor nanowire (NW) optical structures, and present a systematic investigation on light management of the corresponding arrays based on GaAs. It is found that the modification makes well utilization of light scattering and antireflection, thus leading to excellent light confinement with limited effective thickness. For example, 90% and 95% of the incident photons with the energy larger than the bandgap energy can be trapped by the inverted hemiellipsoid-modified NW arrays with the effective thicknesses of only ~ 180 and 270 nm, respectively. Moreover, excellent light confinement can be achieved in a broad range of the modification height. Compared to the corresponding array without top modification, spatial distribution of the photo-generated carriers is expanded, facilitating carrier collection especially for the planar pn junction configuration. Further investigation indicates that these composite nanostructures possess excellent omnidirectional light confinement, which is expected for advanced solar absorbers.http://link.springer.com/article/10.1186/s11671-018-2659-2Optical propertiesPhotovoltaicGaAsSolar cellsPhysical optics |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Xinyu Chen Jiang Wang Pengfei Shao Qiming Liu Dequan Liu Qiang Chen Yali Li Junshuai Li Deyan He |
spellingShingle |
Xinyu Chen Jiang Wang Pengfei Shao Qiming Liu Dequan Liu Qiang Chen Yali Li Junshuai Li Deyan He Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays Nanoscale Research Letters Optical properties Photovoltaic GaAs Solar cells Physical optics |
author_facet |
Xinyu Chen Jiang Wang Pengfei Shao Qiming Liu Dequan Liu Qiang Chen Yali Li Junshuai Li Deyan He |
author_sort |
Xinyu Chen |
title |
Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays |
title_short |
Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays |
title_full |
Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays |
title_fullStr |
Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays |
title_full_unstemmed |
Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays |
title_sort |
excellent light confinement of hemiellipsoid- and inverted hemiellipsoid-modified semiconductor nanowire arrays |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2018-08-01 |
description |
Abstract In this paper, we introduce hemiellipsoid- and inverted hemiellipsoid-modified semiconductor nanowire (NW) optical structures, and present a systematic investigation on light management of the corresponding arrays based on GaAs. It is found that the modification makes well utilization of light scattering and antireflection, thus leading to excellent light confinement with limited effective thickness. For example, 90% and 95% of the incident photons with the energy larger than the bandgap energy can be trapped by the inverted hemiellipsoid-modified NW arrays with the effective thicknesses of only ~ 180 and 270 nm, respectively. Moreover, excellent light confinement can be achieved in a broad range of the modification height. Compared to the corresponding array without top modification, spatial distribution of the photo-generated carriers is expanded, facilitating carrier collection especially for the planar pn junction configuration. Further investigation indicates that these composite nanostructures possess excellent omnidirectional light confinement, which is expected for advanced solar absorbers. |
topic |
Optical properties Photovoltaic GaAs Solar cells Physical optics |
url |
http://link.springer.com/article/10.1186/s11671-018-2659-2 |
work_keys_str_mv |
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