PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT
The PHEMTs are proposed to be used as circuit elements for low-power-consumption microwave (1− 4 GHz) amplifiers operating in a wide temperature range environment. Experimental amplifier operates within temperatures −100 to +100°C preserving the general electrical properties. It seems reasonable to...
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National Academy of Sciences of Ukraine, Institute of Radio Astronomy
2014-06-01
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doaj-a5f2194df4284755913f90b7b75f3b6b2021-02-11T12:40:04ZengNational Academy of Sciences of Ukraine, Institute of Radio AstronomyRadio Physics and Radio Astronomy1027-96362415-70072014-06-0119218118510.15407/rpra19.02.181PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENTA. M. Korolev0Institute of Radio Astronomy, National Academy of Sciences of Ukraine, 4, Mystetstv St., Kharkiv, 61002, UkraineThe PHEMTs are proposed to be used as circuit elements for low-power-consumption microwave (1− 4 GHz) amplifiers operating in a wide temperature range environment. Experimental amplifier operates within temperatures −100 to +100°C preserving the general electrical properties. It seems reasonable to conclude prospects of using GaAs PHEMTs in the stand-by receivers operating in extreme environment conditions.http://rpra-journal.org.ua/index.php/ra/article/view/1176/811pseudomorphic field-effect transistor with high electron mobilitymicrowave amplifierlow source voltagetemperature stability |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
A. M. Korolev |
spellingShingle |
A. M. Korolev PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT Radio Physics and Radio Astronomy pseudomorphic field-effect transistor with high electron mobility microwave amplifier low source voltage temperature stability |
author_facet |
A. M. Korolev |
author_sort |
A. M. Korolev |
title |
PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT |
title_short |
PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT |
title_full |
PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT |
title_fullStr |
PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT |
title_full_unstemmed |
PHEMTS AS CIRCUIT ELEMENTS FOR LOW-POWER-CONSUMPTION RECEIVERS/AMPLIFIERS OPERATING IN A WIDE TEMPERATURE RANGE ENVIRONMENT |
title_sort |
phemts as circuit elements for low-power-consumption receivers/amplifiers operating in a wide temperature range environment |
publisher |
National Academy of Sciences of Ukraine, Institute of Radio Astronomy |
series |
Radio Physics and Radio Astronomy |
issn |
1027-9636 2415-7007 |
publishDate |
2014-06-01 |
description |
The PHEMTs are proposed to be used as circuit elements for low-power-consumption microwave (1− 4 GHz) amplifiers operating in a wide temperature range environment. Experimental amplifier operates within temperatures −100 to +100°C preserving the general electrical properties. It seems reasonable to conclude prospects of using GaAs PHEMTs in the stand-by receivers operating in extreme environment conditions. |
topic |
pseudomorphic field-effect transistor with high electron mobility microwave amplifier low source voltage temperature stability |
url |
http://rpra-journal.org.ua/index.php/ra/article/view/1176/811 |
work_keys_str_mv |
AT amkorolev phemtsascircuitelementsforlowpowerconsumptionreceiversamplifiersoperatinginawidetemperaturerangeenvironment |
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1724274307689873408 |