High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis

High-aspect ratio β-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio β-Ga2O3 nanorods was attributed to the o...

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Main Authors:	Hyun Jeong Bae, Tae Hee Yoo, Youngbin Yoon, In Gyu Lee, Jong Pil Kim, Byung Jin Cho, Wan Sik Hwang
Format:	Article
Language:	English
Published:	MDPI AG 2018-08-01
Series:	Nanomaterials
Subjects:	low dimensional structures hydrothermal crystal growth nanomaterials Ga2O3 nanorods
Online Access:	http://www.mdpi.com/2079-4991/8/8/594

id	doaj-a6b4cd595d2b469cbbd913018a4cbd24
record_format	Article
spelling	doaj-a6b4cd595d2b469cbbd913018a4cbd242020-11-25T01:40:24ZengMDPI AGNanomaterials2079-49912018-08-018859410.3390/nano8080594nano8080594High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal SynthesisHyun Jeong Bae0Tae Hee Yoo1Youngbin Yoon2In Gyu Lee3Jong Pil Kim4Byung Jin Cho5Wan Sik Hwang6Department of Materials Engineering, Korea Aerospace University, Goyang 10540, KoreaDepartment of Materials Engineering, Korea Aerospace University, Goyang 10540, KoreaDepartment of Materials Engineering, Korea Aerospace University, Goyang 10540, KoreaDepartment of Materials Engineering, Korea Aerospace University, Goyang 10540, KoreaDivision of Analysis & Research, Korea Basic Science Institute, Busan 46742, KoreaSchool of Electrical Engineering, KAIST, Daejeon 34141, KoreaDepartment of Materials Engineering, Korea Aerospace University, Goyang 10540, KoreaHigh-aspect ratio β-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio β-Ga2O3 nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio β-Ga2O3 nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of β-Ga2O3 and expedite the integration of one-dimensional β-Ga2O3 into future electronics, sensors, and optoelectronics.http://www.mdpi.com/2079-4991/8/8/594low dimensional structureshydrothermal crystal growthnanomaterialsGa2O3nanorods
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Hyun Jeong Bae Tae Hee Yoo Youngbin Yoon In Gyu Lee Jong Pil Kim Byung Jin Cho Wan Sik Hwang
spellingShingle	Hyun Jeong Bae Tae Hee Yoo Youngbin Yoon In Gyu Lee Jong Pil Kim Byung Jin Cho Wan Sik Hwang High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis Nanomaterials low dimensional structures hydrothermal crystal growth nanomaterials Ga2O3 nanorods
author_facet	Hyun Jeong Bae Tae Hee Yoo Youngbin Yoon In Gyu Lee Jong Pil Kim Byung Jin Cho Wan Sik Hwang
author_sort	Hyun Jeong Bae
title	High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis
title_short	High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis
title_full	High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis
title_fullStr	High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis
title_full_unstemmed	High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis
title_sort	high-aspect ratio β-ga2o3 nanorods via hydrothermal synthesis
publisher	MDPI AG
series	Nanomaterials
issn	2079-4991
publishDate	2018-08-01
description	High-aspect ratio β-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio β-Ga2O3 nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio β-Ga2O3 nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of β-Ga2O3 and expedite the integration of one-dimensional β-Ga2O3 into future electronics, sensors, and optoelectronics.
topic	low dimensional structures hydrothermal crystal growth nanomaterials Ga2O3 nanorods
url	http://www.mdpi.com/2079-4991/8/8/594
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High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis

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