Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference method
Numerical approaches play an outstanding role in solution of quantum mechanical problems with due attention to the complexity of analytic solutions for open systems. This paper studies quantum characteristics of the previously proposed side-contacted field-effect diode (S-FED) as an emerging device...
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doaj-a6cb71bdfeee46978a72b1c4ca345a292020-12-25T05:08:45ZengElsevierResults in Physics2211-37972020-12-0119103502Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference methodTara Ghafouri0Zohreh Golshan Bafghi1Nima Nouri2Negin Manavizadeh3Faculty of Electrical Engineering, K.N. Toosi University of Technology, Tehran 1631714191, IranFaculty of Electrical Engineering, K.N. Toosi University of Technology, Tehran 1631714191, IranFaculty of Electrical Engineering, K.N. Toosi University of Technology, Tehran 1631714191, IranCorresponding author.; Faculty of Electrical Engineering, K.N. Toosi University of Technology, Tehran 1631714191, IranNumerical approaches play an outstanding role in solution of quantum mechanical problems with due attention to the complexity of analytic solutions for open systems. This paper studies quantum characteristics of the previously proposed side-contacted field-effect diode (S-FED) as an emerging device in the modern system-on-chips (SoCs) using the finite-difference method (FDM). The characteristics obtained by solving the Schrödinger equation and regarding the distinguished potentials in ON and OFF states include energy levels and time-independent/dependent wave functions. The cosine dependency of eigenvalues on longitudinal position conveys level broadening in high states stringing a sequence of probability oscillations in the ON state. Remarkable potential barriers in the OFF state result in an inability of electron movement from source to drain in low energies; nevertheless, by overcoming the total energy to potential barrier, the transport is feasible in higher states, so that minority carriers contribute to transport mechanism in the highest energies.http://www.sciencedirect.com/science/article/pii/S2211379720319562Finite-difference method (FDM)Side-contacted field-effect diode (S-FED)Schrödinger equation |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tara Ghafouri Zohreh Golshan Bafghi Nima Nouri Negin Manavizadeh |
spellingShingle |
Tara Ghafouri Zohreh Golshan Bafghi Nima Nouri Negin Manavizadeh Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference method Results in Physics Finite-difference method (FDM) Side-contacted field-effect diode (S-FED) Schrödinger equation |
author_facet |
Tara Ghafouri Zohreh Golshan Bafghi Nima Nouri Negin Manavizadeh |
author_sort |
Tara Ghafouri |
title |
Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference method |
title_short |
Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference method |
title_full |
Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference method |
title_fullStr |
Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference method |
title_full_unstemmed |
Numerical solution of the Schrödinger equation in nanoscale side-contacted FED applying the finite-difference method |
title_sort |
numerical solution of the schrödinger equation in nanoscale side-contacted fed applying the finite-difference method |
publisher |
Elsevier |
series |
Results in Physics |
issn |
2211-3797 |
publishDate |
2020-12-01 |
description |
Numerical approaches play an outstanding role in solution of quantum mechanical problems with due attention to the complexity of analytic solutions for open systems. This paper studies quantum characteristics of the previously proposed side-contacted field-effect diode (S-FED) as an emerging device in the modern system-on-chips (SoCs) using the finite-difference method (FDM). The characteristics obtained by solving the Schrödinger equation and regarding the distinguished potentials in ON and OFF states include energy levels and time-independent/dependent wave functions. The cosine dependency of eigenvalues on longitudinal position conveys level broadening in high states stringing a sequence of probability oscillations in the ON state. Remarkable potential barriers in the OFF state result in an inability of electron movement from source to drain in low energies; nevertheless, by overcoming the total energy to potential barrier, the transport is feasible in higher states, so that minority carriers contribute to transport mechanism in the highest energies. |
topic |
Finite-difference method (FDM) Side-contacted field-effect diode (S-FED) Schrödinger equation |
url |
http://www.sciencedirect.com/science/article/pii/S2211379720319562 |
work_keys_str_mv |
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