Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC

Calculation of spin-Hamiltonian constants for extended defects (VSi-VC)0 (Ky5) in silicon carbide polytype 3C-SiC

This work presents theoretical studying the neutral divacancy, i.e., the Ky5 center that is one of the dominant defects in 3C-SiC bulk crystals subjected to relatively high dose of neutron irradiation. Being the paramagnetic center, the extended defect Ky5 shows the value of the zero field splittin...

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Bibliographic Details
Main Authors: B.D. Shanina, V.Ya. Bratus’
Format: Article
Language:English
Published: National Academy of Sciences of Ukraine. Institute of Semi conductor physics. 2018-10-01
Series:Semiconductor Physics, Quantum Electronics & Optoelectronics
Subjects:
electron paramagnetic resonance
3C-SiC
electron density
divacancy
zero-field-splitting constant
dipole-dipole and spin-orbit interactions
Online Access:http://journal-spqeo.org.ua/n3_2018/P225-230abstr.html

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