Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
In electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
1994-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1994/60298 |
| Summary: | In electromigration failure studies, it is in general assumed that electromigration-induced failures may
be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal
distribution of failure times is indicative of electromigration mechanisms. We have combined
post processing of existing life-data from Al/Cu + TiW bilayer interconnects with our own results from
Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical
model for electromigration failures, even in cases where grain size exceeds the linewidth. The significance
of such a modelling is particularly apparent in electromigration failure rate prediction. |
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| ISSN: | 0882-7516 1563-5031 |