Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects
In electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combi...
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1994-01-01
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Series: | Active and Passive Electronic Components |
Online Access: | http://dx.doi.org/10.1155/1994/60298 |
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doaj-a70b0fbd1dec408c988798ef6a5d7e972020-11-25T01:06:06ZengHindawi LimitedActive and Passive Electronic Components0882-75161563-50311994-01-0116211912610.1155/1994/60298Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film InterconnectsM. I. Loupis0J. N. Avaritsiotis1G. D. Tziallas2National Technical University of Athens, School of Electrical Engineering, Computer Science, Dept., Microelectronics Group, Zografou GR-157 73, GreeceNational Technical University of Athens, School of Electrical Engineering, Computer Science, Dept., Microelectronics Group, Zografou GR-157 73, GreeceNational Technical University of Athens, School of Electrical Engineering, Computer Science, Dept., Microelectronics Group, Zografou GR-157 73, GreeceIn electromigration failure studies, it is in general assumed that electromigration-induced failures may be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal distribution of failure times is indicative of electromigration mechanisms. We have combined post processing of existing life-data from Al/Cu + TiW bilayer interconnects with our own results from Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical model for electromigration failures, even in cases where grain size exceeds the linewidth. The significance of such a modelling is particularly apparent in electromigration failure rate prediction.http://dx.doi.org/10.1155/1994/60298 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
M. I. Loupis J. N. Avaritsiotis G. D. Tziallas |
spellingShingle |
M. I. Loupis J. N. Avaritsiotis G. D. Tziallas Comparative Study of Statistical Distributions in Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects Active and Passive Electronic Components |
author_facet |
M. I. Loupis J. N. Avaritsiotis G. D. Tziallas |
author_sort |
M. I. Loupis |
title |
Comparative Study of Statistical Distributions in
Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects |
title_short |
Comparative Study of Statistical Distributions in
Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects |
title_full |
Comparative Study of Statistical Distributions in
Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects |
title_fullStr |
Comparative Study of Statistical Distributions in
Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects |
title_full_unstemmed |
Comparative Study of Statistical Distributions in
Electromigration-Induced Failures of Al/Cu Thin-Film Interconnects |
title_sort |
comparative study of statistical distributions in
electromigration-induced failures of al/cu thin-film interconnects |
publisher |
Hindawi Limited |
series |
Active and Passive Electronic Components |
issn |
0882-7516 1563-5031 |
publishDate |
1994-01-01 |
description |
In electromigration failure studies, it is in general assumed that electromigration-induced failures may
be adequately modelled by a log-normal distribution. Further to this, it has been argued that a lognormal
distribution of failure times is indicative of electromigration mechanisms. We have combined
post processing of existing life-data from Al/Cu + TiW bilayer interconnects with our own results from
Al/Cu interconnects to show that the Log Extreme Value distribution is an equally good statistical
model for electromigration failures, even in cases where grain size exceeds the linewidth. The significance
of such a modelling is particularly apparent in electromigration failure rate prediction. |
url |
http://dx.doi.org/10.1155/1994/60298 |
work_keys_str_mv |
AT miloupis comparativestudyofstatisticaldistributionsinelectromigrationinducedfailuresofalcuthinfilminterconnects AT jnavaritsiotis comparativestudyofstatisticaldistributionsinelectromigrationinducedfailuresofalcuthinfilminterconnects AT gdtziallas comparativestudyofstatisticaldistributionsinelectromigrationinducedfailuresofalcuthinfilminterconnects |
_version_ |
1725191384495816704 |