Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer

Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer

Abstract AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron overflow and insufficient hole injection. In this paper, novel DUV LED structures with superlattice electron deceleration layer (SEDL) is proposed to decelerate the electrons injected to the active region a...

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Main Authors: Jiahui Hu, Jun Zhang, Yi Zhang, Huixue Zhang, Hanling Long, Qian Chen, Maocheng Shan, Shida Du, Jiangnan Dai, Changqing Chen
Format: Article
Language:English
Published: SpringerOpen 2019-11-01
Series:Nanoscale Research Letters
Subjects:
AlGaN
DUV LED
SEDL
MOCVD
APSYS
Online Access:http://link.springer.com/article/10.1186/s11671-019-3201-x
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spelling doaj-a70ed3af719f4a249c5fda6168136cf52020-11-25T04:09:53ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-11-011411810.1186/s11671-019-3201-xEnhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration LayerJiahui Hu0Jun Zhang1Yi Zhang2Huixue Zhang3Hanling Long4Qian Chen5Maocheng Shan6Shida Du7Jiangnan Dai8Changqing Chen9Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyWuhan National Laboratory for Optoelectronics, Huazhong University of Science and TechnologyAbstract AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron overflow and insufficient hole injection. In this paper, novel DUV LED structures with superlattice electron deceleration layer (SEDL) is proposed to decelerate the electrons injected to the active region and improve radiative recombination. The effects of several chirped SEDLs on the performance of DUV LEDs have been studied experimentally and numerically. The DUV LEDs have been grown by metal-organic chemical vapor deposition (MOCVD) and fabricated into 762 × 762 μm2 chips, exhibiting single peak emission at 275 nm. The external quantum efficiency of 3.43% and operating voltage of 6.4 V are measured at a forward current of 40 mA, indicating that the wall-plug efficiency is 2.41% of the DUV LEDs with ascending Al-content chirped SEDL. The mechanism responsible for this improvement is investigated by theoretical simulations. The lifetime of the DUV LED with ascending Al-content chirped SEDL is measured to be over 10,000 h at L50, due to the carrier injection promotion.http://link.springer.com/article/10.1186/s11671-019-3201-xAlGaNDUV LEDSEDLMOCVDAPSYS
collection DOAJ
language English
format Article
sources DOAJ
author Jiahui Hu
Jun Zhang
Yi Zhang
Huixue Zhang
Hanling Long
Qian Chen
Maocheng Shan
Shida Du
Jiangnan Dai
Changqing Chen
spellingShingle Jiahui Hu
Jun Zhang
Yi Zhang
Huixue Zhang
Hanling Long
Qian Chen
Maocheng Shan
Shida Du
Jiangnan Dai
Changqing Chen
Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
Nanoscale Research Letters
AlGaN
DUV LED
SEDL
MOCVD
APSYS
author_facet Jiahui Hu
Jun Zhang
Yi Zhang
Huixue Zhang
Hanling Long
Qian Chen
Maocheng Shan
Shida Du
Jiangnan Dai
Changqing Chen
author_sort Jiahui Hu
title Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
title_short Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
title_full Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
title_fullStr Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
title_full_unstemmed Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
title_sort enhanced performance of algan-based deep ultraviolet light-emitting diodes with chirped superlattice electron deceleration layer
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2019-11-01
description Abstract AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) suffer from electron overflow and insufficient hole injection. In this paper, novel DUV LED structures with superlattice electron deceleration layer (SEDL) is proposed to decelerate the electrons injected to the active region and improve radiative recombination. The effects of several chirped SEDLs on the performance of DUV LEDs have been studied experimentally and numerically. The DUV LEDs have been grown by metal-organic chemical vapor deposition (MOCVD) and fabricated into 762 × 762 μm2 chips, exhibiting single peak emission at 275 nm. The external quantum efficiency of 3.43% and operating voltage of 6.4 V are measured at a forward current of 40 mA, indicating that the wall-plug efficiency is 2.41% of the DUV LEDs with ascending Al-content chirped SEDL. The mechanism responsible for this improvement is investigated by theoretical simulations. The lifetime of the DUV LED with ascending Al-content chirped SEDL is measured to be over 10,000 h at L50, due to the carrier injection promotion.
topic AlGaN
DUV LED
SEDL
MOCVD
APSYS
url http://link.springer.com/article/10.1186/s11671-019-3201-x
work_keys_str_mv AT jiahuihu enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT junzhang enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT yizhang enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT huixuezhang enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT hanlinglong enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT qianchen enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT maochengshan enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT shidadu enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT jiangnandai enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
AT changqingchen enhancedperformanceofalganbaseddeepultravioletlightemittingdiodeswithchirpedsuperlatticeelectrondecelerationlayer
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