Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (V<sub>th</sub>) during switching was observed. This dynamic V<sub>th</sub> behavior of SFG device is because of the special device structure...

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Main Authors:	Jun Wu, Lin-Qing Zhang, Yao Yao, Min-Zhi Lin, Zhi-Yuan Ye, Peng-Fei Wang
Format:	Article
Language:	English
Published:	IEEE 2017-01-01
Series:	IEEE Journal of the Electron Devices Society
Subjects:	Semi-floating gate dynamic threshold voltage enhancement-mode GaN HEMT
Online Access:	https://ieeexplore.ieee.org/document/7807226/

id	doaj-a831ecc1659446f79d2fb4c50609e07e
record_format	Article
spelling	doaj-a831ecc1659446f79d2fb4c50609e07e2021-03-29T18:43:56ZengIEEEIEEE Journal of the Electron Devices Society2168-67342017-01-015211712110.1109/JEDS.2017.26479797807226Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMTJun Wu0https://orcid.org/0000-0003-1385-098XLin-Qing Zhang1https://orcid.org/0000-0002-7072-6187Yao Yao2Min-Zhi Lin3Zhi-Yuan Ye4Peng-Fei Wang5Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, ChinaDepartment of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, ChinaDepartment of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, ChinaDepartment of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, ChinaDepartment of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, ChinaDepartment of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, ChinaIn this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (V<sub>th</sub>) during switching was observed. This dynamic V<sub>th</sub> behavior of SFG device is because of the special device structure of SFG transistors. Based on the V<sub>th</sub>-programmable behavior of the SFG transistor, a SFG-based GaN high electron mobility transistor was proposed and enhancement-mode was realized with writing-0 into the transistor during every switching operation by simulation.https://ieeexplore.ieee.org/document/7807226/Semi-floating gatedynamic threshold voltageenhancement-mode GaN HEMT
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Jun Wu Lin-Qing Zhang Yao Yao Min-Zhi Lin Zhi-Yuan Ye Peng-Fei Wang
spellingShingle	Jun Wu Lin-Qing Zhang Yao Yao Min-Zhi Lin Zhi-Yuan Ye Peng-Fei Wang Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT IEEE Journal of the Electron Devices Society Semi-floating gate dynamic threshold voltage enhancement-mode GaN HEMT
author_facet	Jun Wu Lin-Qing Zhang Yao Yao Min-Zhi Lin Zhi-Yuan Ye Peng-Fei Wang
author_sort	Jun Wu
title	Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT
title_short	Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT
title_full	Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT
title_fullStr	Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT
title_full_unstemmed	Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT
title_sort	investigation of dynamic threshold voltage behavior in semi-floating gate transistor for normally-off algan/gan hemt
publisher	IEEE
series	IEEE Journal of the Electron Devices Society
issn	2168-6734
publishDate	2017-01-01
description	In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (V<sub>th</sub>) during switching was observed. This dynamic V<sub>th</sub> behavior of SFG device is because of the special device structure of SFG transistors. Based on the V<sub>th</sub>-programmable behavior of the SFG transistor, a SFG-based GaN high electron mobility transistor was proposed and enhancement-mode was realized with writing-0 into the transistor during every switching operation by simulation.
topic	Semi-floating gate dynamic threshold voltage enhancement-mode GaN HEMT
url	https://ieeexplore.ieee.org/document/7807226/
work_keys_str_mv	AT junwu investigationofdynamicthresholdvoltagebehaviorinsemifloatinggatetransistorfornormallyoffalganganhemt AT linqingzhang investigationofdynamicthresholdvoltagebehaviorinsemifloatinggatetransistorfornormallyoffalganganhemt AT yaoyao investigationofdynamicthresholdvoltagebehaviorinsemifloatinggatetransistorfornormallyoffalganganhemt AT minzhilin investigationofdynamicthresholdvoltagebehaviorinsemifloatinggatetransistorfornormallyoffalganganhemt AT zhiyuanye investigationofdynamicthresholdvoltagebehaviorinsemifloatinggatetransistorfornormallyoffalganganhemt AT pengfeiwang investigationofdynamicthresholdvoltagebehaviorinsemifloatinggatetransistorfornormallyoffalganganhemt
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Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

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