Non–zero-crossing current-voltage hysteresis behavior in memristive system
Since the memristor was theoretically predicted at 1971, the research on memristor and memristive behavior has attracted great interest. However, there is a debate about the physical model of the non–zero-crossing (or named non-pinched) current-voltage (I–V) hysteresis behavior observed experimental...
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doaj-a88b3ab1094d4646b15c71ec3e077b2f2020-11-25T03:21:58ZengElsevierMaterials Today Advances2590-04982020-06-016Non–zero-crossing current-voltage hysteresis behavior in memristive systemB. Sun0M. Xiao1G. Zhou2Z. Ren3Y.N. Zhou4Y.A. Wu5Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada; School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan, 610031, ChinaDepartment of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, CanadaSchool of Artificial Intelligence, Southwest University, Chongqing, 400715, China; Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing, 400715, ChinaInstitute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing, 400715, ChinaDepartment of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada; Corresponding author.Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada; Corresponding author.Since the memristor was theoretically predicted at 1971, the research on memristor and memristive behavior has attracted great interest. However, there is a debate about the physical model of the non–zero-crossing (or named non-pinched) current-voltage (I–V) hysteresis behavior observed experimentally in many reported memristive devices. By identifying and analyzing all these non–zero-crossing hysteresis curves, we attribute this behavior to three mechanisms: the involvement of a capacitive effect, the appearance of a ferroelectric or piezoelectric polarization, and the formation of an internal electromotive force. Among them, the memristive behavior involving a capacitive effect has been reported extensively. It demonstrates that the combination of multiple physical properties (memristive and capacitive) in a single device could prefigure potential multifunctional applications. In this review, we discuss the physical mechanism of non–zero-crossing I–V curves, the related research progress with particular emphasis on the origin of non–zero-crossing I–V curves. Moreover, the existing problems in this field and the possible solutions will be discussed, providing an outlook for the future developments.http://www.sciencedirect.com/science/article/pii/S2590049820300035Current-voltage curvesHysteresis behaviorMemristorCapacitiveFerroelectricInternal electromotive force |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
B. Sun M. Xiao G. Zhou Z. Ren Y.N. Zhou Y.A. Wu |
spellingShingle |
B. Sun M. Xiao G. Zhou Z. Ren Y.N. Zhou Y.A. Wu Non–zero-crossing current-voltage hysteresis behavior in memristive system Materials Today Advances Current-voltage curves Hysteresis behavior Memristor Capacitive Ferroelectric Internal electromotive force |
author_facet |
B. Sun M. Xiao G. Zhou Z. Ren Y.N. Zhou Y.A. Wu |
author_sort |
B. Sun |
title |
Non–zero-crossing current-voltage hysteresis behavior in memristive system |
title_short |
Non–zero-crossing current-voltage hysteresis behavior in memristive system |
title_full |
Non–zero-crossing current-voltage hysteresis behavior in memristive system |
title_fullStr |
Non–zero-crossing current-voltage hysteresis behavior in memristive system |
title_full_unstemmed |
Non–zero-crossing current-voltage hysteresis behavior in memristive system |
title_sort |
non–zero-crossing current-voltage hysteresis behavior in memristive system |
publisher |
Elsevier |
series |
Materials Today Advances |
issn |
2590-0498 |
publishDate |
2020-06-01 |
description |
Since the memristor was theoretically predicted at 1971, the research on memristor and memristive behavior has attracted great interest. However, there is a debate about the physical model of the non–zero-crossing (or named non-pinched) current-voltage (I–V) hysteresis behavior observed experimentally in many reported memristive devices. By identifying and analyzing all these non–zero-crossing hysteresis curves, we attribute this behavior to three mechanisms: the involvement of a capacitive effect, the appearance of a ferroelectric or piezoelectric polarization, and the formation of an internal electromotive force. Among them, the memristive behavior involving a capacitive effect has been reported extensively. It demonstrates that the combination of multiple physical properties (memristive and capacitive) in a single device could prefigure potential multifunctional applications. In this review, we discuss the physical mechanism of non–zero-crossing I–V curves, the related research progress with particular emphasis on the origin of non–zero-crossing I–V curves. Moreover, the existing problems in this field and the possible solutions will be discussed, providing an outlook for the future developments. |
topic |
Current-voltage curves Hysteresis behavior Memristor Capacitive Ferroelectric Internal electromotive force |
url |
http://www.sciencedirect.com/science/article/pii/S2590049820300035 |
work_keys_str_mv |
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