Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods

To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO s...

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Bibliographic Details
Main Authors: Tzu-Han Su, Ke-Jing Lee, Li-Wen Wang, Yu-Chi Chang, Yeong-Her Wang
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Materials
Subjects:
bipolar
memory
nanorod
resistive
hydrothermal method
Online Access:https://www.mdpi.com/1996-1944/13/12/2755
Description
Summary:To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.
ISSN:1996-1944

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