Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods
To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO s...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-06-01
|
Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/13/12/2755 |
id |
doaj-a8c9ff4ac6e949859d299b42addca8e4 |
---|---|
record_format |
Article |
spelling |
doaj-a8c9ff4ac6e949859d299b42addca8e42020-11-25T02:52:22ZengMDPI AGMaterials1996-19442020-06-01132755275510.3390/ma13122755Resistive Switching Behavior of Magnesium Zirconia Nickel NanorodsTzu-Han Su0Ke-Jing Lee1Li-Wen Wang2Yu-Chi Chang3Yeong-Her Wang4Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanTo effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.https://www.mdpi.com/1996-1944/13/12/2755bipolarmemorynanorodresistivehydrothermal method |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tzu-Han Su Ke-Jing Lee Li-Wen Wang Yu-Chi Chang Yeong-Her Wang |
spellingShingle |
Tzu-Han Su Ke-Jing Lee Li-Wen Wang Yu-Chi Chang Yeong-Her Wang Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods Materials bipolar memory nanorod resistive hydrothermal method |
author_facet |
Tzu-Han Su Ke-Jing Lee Li-Wen Wang Yu-Chi Chang Yeong-Her Wang |
author_sort |
Tzu-Han Su |
title |
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods |
title_short |
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods |
title_full |
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods |
title_fullStr |
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods |
title_full_unstemmed |
Resistive Switching Behavior of Magnesium Zirconia Nickel Nanorods |
title_sort |
resistive switching behavior of magnesium zirconia nickel nanorods |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2020-06-01 |
description |
To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices. |
topic |
bipolar memory nanorod resistive hydrothermal method |
url |
https://www.mdpi.com/1996-1944/13/12/2755 |
work_keys_str_mv |
AT tzuhansu resistiveswitchingbehaviorofmagnesiumzirconianickelnanorods AT kejinglee resistiveswitchingbehaviorofmagnesiumzirconianickelnanorods AT liwenwang resistiveswitchingbehaviorofmagnesiumzirconianickelnanorods AT yuchichang resistiveswitchingbehaviorofmagnesiumzirconianickelnanorods AT yeongherwang resistiveswitchingbehaviorofmagnesiumzirconianickelnanorods |
_version_ |
1724730501603786752 |