Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials

Giant dielectric material CaCu3Ti4O12 (CCTO) has found widespread applications, but associated high dielectric loss is still a major concern. The decreasing of dielectric tangent loss (tan δ) via rare earth element doping has been proven to be effective strategy, but in most cases it involves comple...

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Main Author: Arindam Sen
Format: Article
Language:English
Published: University of Novi Sad 2020-09-01
Series:Processing and Application of Ceramics
Subjects:
Online Access:http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2049%2009.pdf
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spelling doaj-a92a96cc00dc46edb7c6b7c33469dae32020-11-25T01:24:14ZengUniversity of Novi SadProcessing and Application of Ceramics1820-61312406-10342020-09-0114324225010.2298/PAC2003242SProcessing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materialsArindam Sen0Department of Electronics, Bankura Christian College, Bankura-722101, West Bengal, IndiaGiant dielectric material CaCu3Ti4O12 (CCTO) has found widespread applications, but associated high dielectric loss is still a major concern. The decreasing of dielectric tangent loss (tan δ) via rare earth element doping has been proven to be effective strategy, but in most cases it involves complex and time consuming processing. In the present paper, a fast and facile process is reported for the synthesis of lanthanum doped CCTO powders (Ca1-xLaxCu3Ti4O12 where x = 0.0, 0.05 and 0.1) using molten eutectic mixture as the reaction medium. The obtained powders were pressed and finally sintered at 1050 °C. La3+ substitution at Ca2+ site results in remarkable reduction in dielectric loss (tan δ < 0.03) at room temperature compared to the parent CCTO. The increased grain boundary resistance (Rgb) estimated from room temperature complex impedance plane plot (Z∗) for the doped ceramics is proposed to be the major cause for higher thermal stability of dielectric constant (εr) and remarkable reduction in tan δ at room temperature. Furthermore, the frequency and temperature stability of εr and tan δ over wide ranges make the doped CCTO a promising candidate for high temperature ceramic capacitor application.http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2049%2009.pdfcacu3ti4o12 ceramicsdielectric propertiesmicrostructureperovskitessintering
collection DOAJ
language English
format Article
sources DOAJ
author Arindam Sen
spellingShingle Arindam Sen
Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials
Processing and Application of Ceramics
cacu3ti4o12 ceramics
dielectric properties
microstructure
perovskites
sintering
author_facet Arindam Sen
author_sort Arindam Sen
title Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials
title_short Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials
title_full Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials
title_fullStr Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials
title_full_unstemmed Processing of lanthanum doped CaCu3Ti4O12 electroceramics in molten eutectic mixture for low loss high dielectric materials
title_sort processing of lanthanum doped cacu3ti4o12 electroceramics in molten eutectic mixture for low loss high dielectric materials
publisher University of Novi Sad
series Processing and Application of Ceramics
issn 1820-6131
2406-1034
publishDate 2020-09-01
description Giant dielectric material CaCu3Ti4O12 (CCTO) has found widespread applications, but associated high dielectric loss is still a major concern. The decreasing of dielectric tangent loss (tan δ) via rare earth element doping has been proven to be effective strategy, but in most cases it involves complex and time consuming processing. In the present paper, a fast and facile process is reported for the synthesis of lanthanum doped CCTO powders (Ca1-xLaxCu3Ti4O12 where x = 0.0, 0.05 and 0.1) using molten eutectic mixture as the reaction medium. The obtained powders were pressed and finally sintered at 1050 °C. La3+ substitution at Ca2+ site results in remarkable reduction in dielectric loss (tan δ < 0.03) at room temperature compared to the parent CCTO. The increased grain boundary resistance (Rgb) estimated from room temperature complex impedance plane plot (Z∗) for the doped ceramics is proposed to be the major cause for higher thermal stability of dielectric constant (εr) and remarkable reduction in tan δ at room temperature. Furthermore, the frequency and temperature stability of εr and tan δ over wide ranges make the doped CCTO a promising candidate for high temperature ceramic capacitor application.
topic cacu3ti4o12 ceramics
dielectric properties
microstructure
perovskites
sintering
url http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2049%2009.pdf
work_keys_str_mv AT arindamsen processingoflanthanumdopedcacu3ti4o12electroceramicsinmolteneutecticmixtureforlowlosshighdielectricmaterials
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