Channel Length Biasing for Improving Read Margin of the 8T SRAM at Near Threshold Operation
Reducing a supply voltage in order to minimize power consumption in memory is a major design consideration in this field of study. In static random access memory (SRAM), optimum energy can be achieved by reducing the voltage near the threshold voltage level for near threshold voltage computing (NTC)...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/6/611 |