Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires
The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam e...
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doaj-aaa9db30a697488b97b5b9d6a36962f02021-03-06T00:00:55ZengMDPI AGNanomaterials2079-49912021-03-011164064010.3390/nano11030640Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure NanowiresArtem I. Khrebtov0Vladimir V. Danilov1Anastasia S. Kulagina2Rodion R. Reznik3Ivan D. Skurlov4Alexander P. Litvin5Farrukh M. Safin6Vladislav O. Gridchin7Dmitriy S. Shevchuk8Stanislav V. Shmakov9Artem N. Yablonskiy10George E. Cirlin11Alferov University, Khlopinast. 8/3, 194021 St. Petersburg, RussiaEmperor Alexander I St. Petersburg State Transport University, Moskovsky pr. 9, 191031 St. Petersburg, RussiaAlferov University, Khlopinast. 8/3, 194021 St. Petersburg, RussiaAlferov University, Khlopinast. 8/3, 194021 St. Petersburg, RussiaITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, RussiaITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, RussiaITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, RussiaSt. Petersburg State University, Ulyanovskayast. 1, Peterhof, 198504 St. Petersburg, RussiaAlferov University, Khlopinast. 8/3, 194021 St. Petersburg, RussiaAlferov University, Khlopinast. 8/3, 194021 St. Petersburg, RussiaInstitute for Physics of Microstructures RAS, GSP-105, Academicheskayast. 7, Afonino, 603950 Nizhny Novgorod, RussiaAlferov University, Khlopinast. 8/3, 194021 St. Petersburg, RussiaThe passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.https://www.mdpi.com/2079-4991/11/3/640nanowiresTOPO ligandsmolecular-beam epitaxyluminescence kineticsreverse transfer |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Artem I. Khrebtov Vladimir V. Danilov Anastasia S. Kulagina Rodion R. Reznik Ivan D. Skurlov Alexander P. Litvin Farrukh M. Safin Vladislav O. Gridchin Dmitriy S. Shevchuk Stanislav V. Shmakov Artem N. Yablonskiy George E. Cirlin |
spellingShingle |
Artem I. Khrebtov Vladimir V. Danilov Anastasia S. Kulagina Rodion R. Reznik Ivan D. Skurlov Alexander P. Litvin Farrukh M. Safin Vladislav O. Gridchin Dmitriy S. Shevchuk Stanislav V. Shmakov Artem N. Yablonskiy George E. Cirlin Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires Nanomaterials nanowires TOPO ligands molecular-beam epitaxy luminescence kinetics reverse transfer |
author_facet |
Artem I. Khrebtov Vladimir V. Danilov Anastasia S. Kulagina Rodion R. Reznik Ivan D. Skurlov Alexander P. Litvin Farrukh M. Safin Vladislav O. Gridchin Dmitriy S. Shevchuk Stanislav V. Shmakov Artem N. Yablonskiy George E. Cirlin |
author_sort |
Artem I. Khrebtov |
title |
Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires |
title_short |
Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires |
title_full |
Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires |
title_fullStr |
Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires |
title_full_unstemmed |
Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires |
title_sort |
influence of topo and topo-cdse/zns quantum dots on luminescence photodynamics of inp/inasp/inpheterostructure nanowires |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2021-03-01 |
description |
The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated. |
topic |
nanowires TOPO ligands molecular-beam epitaxy luminescence kinetics reverse transfer |
url |
https://www.mdpi.com/2079-4991/11/3/640 |
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