Laser-Induced-Plasma-Assisted Ablation and Metallization on C-Plane Single Crystal Sapphire (c-Al2O3)

• Main Authors: Xizhao Lu, Feng Jiang, Tingping Lei, Rui Zhou, Chentao Zhang, Gaofeng Zheng, Qiuling Wen, Zhong Chen
• Format: Article
• Language: English
• Published: MDPI AG 2017-10-01
• Series: Micromachines
• Subjects: single crystal sapphire; laser-induced-plasma-assisted ablation; repetition rate; metallization; micro-machines
• Online Access: https://www.mdpi.com/2072-666X/8/10/300

Laser-induced-plasma-assisted ablation (LIPAA) is a promising micro-machining method that can fabricate microstructure on hard and transparent double-polished single crystal sapphire (SCS). While ablating, a nanosecond pulse 1064 nm wavelength laser beam travels through the SCS substrate and bombards the copper target lined up behind the substrate, which excites the ablating plasma. When laser fluence rises and is above the machining threshold of copper but below that of SCS, the kinetic energy of the copper plasma generated from the bombardment is mainly determined by the laser fluence, the repetition rate, and the substrate-to-target distance. With a lower repetition rate, SCS becomes metallized and gains conductivity. When micro-machining SCS with a pulsed laser are controlled by properly controlling laser machining parameters, such as laser fluence, repetition rate, and substrate-to-target distance, LIPAA can ablate certain line widths and depths of the microstructure as well as the resistance of SCS. On the contrary, conductivity resistance of metalized sapphire depends on laser parameters and distance in addition to lower repetition rate.