Pure spin currents in Ge probed by inverse spin-Hall effect

We perform photoinduced inverse spin-Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons are photogenerated at the Γ point of the Ge Brillouin zone using circularly-polarized light. After the ultrafast Γ−L scattering in the Ge conduction band, wh...

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Main Authors: F. Bottegoni, C. Zucchetti, M. Finazzi, G. Isella, F. Ciccacci
Format: Article
Language:English
Published: AIP Publishing LLC 2017-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4973392
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spelling doaj-ae3056b1453a4622b7780b1f1ca928052020-11-24T21:47:54ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175055907055907-510.1063/1.4973392045791ADVPure spin currents in Ge probed by inverse spin-Hall effectF. Bottegoni0C. Zucchetti1M. Finazzi2G. Isella3F. Ciccacci4LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, ItalyLNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, ItalyLNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, ItalyLNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, ItalyLNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, ItalyWe perform photoinduced inverse spin-Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons are photogenerated at the Γ point of the Ge Brillouin zone using circularly-polarized light. After the ultrafast Γ−L scattering in the Ge conduction band, which partially preserves the spin polarization, electrons diffuse into the Pt layer where spin-dependent scattering with Pt nuclei yields a transverse electromotive field EISHE. The ISHE signal dependence as a function of the incident photon energy is investigated and interpreted in the frame of a one-dimensional spin drift-diffusion model. This allows estimating the electron spin lifetime at the L-valleys to be τs=1 ns.http://dx.doi.org/10.1063/1.4973392
collection DOAJ
language English
format Article
sources DOAJ
author F. Bottegoni
C. Zucchetti
M. Finazzi
G. Isella
F. Ciccacci
spellingShingle F. Bottegoni
C. Zucchetti
M. Finazzi
G. Isella
F. Ciccacci
Pure spin currents in Ge probed by inverse spin-Hall effect
AIP Advances
author_facet F. Bottegoni
C. Zucchetti
M. Finazzi
G. Isella
F. Ciccacci
author_sort F. Bottegoni
title Pure spin currents in Ge probed by inverse spin-Hall effect
title_short Pure spin currents in Ge probed by inverse spin-Hall effect
title_full Pure spin currents in Ge probed by inverse spin-Hall effect
title_fullStr Pure spin currents in Ge probed by inverse spin-Hall effect
title_full_unstemmed Pure spin currents in Ge probed by inverse spin-Hall effect
title_sort pure spin currents in ge probed by inverse spin-hall effect
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2017-05-01
description We perform photoinduced inverse spin-Hall effect (ISHE) measurements on a Pt/Ge(001) junction at room temperature. The spin-oriented electrons are photogenerated at the Γ point of the Ge Brillouin zone using circularly-polarized light. After the ultrafast Γ−L scattering in the Ge conduction band, which partially preserves the spin polarization, electrons diffuse into the Pt layer where spin-dependent scattering with Pt nuclei yields a transverse electromotive field EISHE. The ISHE signal dependence as a function of the incident photon energy is investigated and interpreted in the frame of a one-dimensional spin drift-diffusion model. This allows estimating the electron spin lifetime at the L-valleys to be τs=1 ns.
url http://dx.doi.org/10.1063/1.4973392
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