Hole Transfer Layer Engineering for CdTe Nanocrystal Photovoltaics with Improved Efficiency

Interface engineering has led to significant progress in solution-processed CdTe nanocrystal (NC) solar cells in recent years. High performance solar cells can be fabricated by introducing a hole transfer layer (HTL) between CdTe and a back contact electrode to reduce carrier recombination by formin...

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Bibliographic Details
Main Authors: Yasi Jiang, Yiyang Pan, Wanhua Wu, Kaiying Luo, Zhitao Rong, Sihang Xie, Wencai Zuo, Jingya Yu, Ruibo Zhang, Donghuan Qin, Wei Xu, Dan Wang, Lintao Hou
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Nanomaterials
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Online Access:https://www.mdpi.com/2079-4991/10/7/1348
Description
Summary:Interface engineering has led to significant progress in solution-processed CdTe nanocrystal (NC) solar cells in recent years. High performance solar cells can be fabricated by introducing a hole transfer layer (HTL) between CdTe and a back contact electrode to reduce carrier recombination by forming interfacial dipole effect at the interface. Here, we report the usage of a commercial product 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (Spiro) as a hole transfer layer to facilitate the hole collecting for CdTe nanocrystal solar cells. It is found that heat treatment on the hole transfer layer has significant influence on the NC solar cells performance. The <i>J</i><sub>sc</sub>, <i>V</i><sub>oc</sub>, and power conversion efficiency (PCE) of NC solar cells are simultaneously increased due to the decreased contact resistance and enhanced built-in electric field. We demonstrate solar cells that achieve a high PCE of 8.34% for solution-processed CdTe NC solar cells with an inverted structure by further optimizing the HTL annealing temperature, which is among the highest value in CdTe NC solar cells with the inverted structure.
ISSN:2079-4991