Room Temperature Operation of UV Photocatalytic Functionalized AlGaN/GaN Heterostructure Hydrogen Sensor
An AlGaN/GaN heterostructure based hydrogen sensor was fabricated using a dual catalyst layer with ZnO-nanoparticles (NPs) atop of Pd catalyst film. The ZnO-NPs were synthesized to have an average diameter of ~10 nm and spin coated on the Pd catalyst layer. Unlike the conventional catalytic reaction...
Main Authors: | June-Heang Choi, Taehyun Park, Jaehyun Hur, Ho-Young Cha |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-05-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/11/6/1422 |
Similar Items
-
Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance
by: Lehmann, Jonathan
Published: (2015) -
Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors
by: Lee, Jaesun
Published: (2006) -
Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature
by: Song, Junghui
Published: (2009) -
Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps
by: Yu-Lin Song, et al.
Published: (2021-06-01) -
Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode
by: Tae-Hyeon Kim, et al.
Published: (2021-03-01)