Effects of Die-Attach Quality on the Mechanical and Thermal Properties of High-Power Light-Emitting Diodes Packaging

• Main Authors: Piaopiao He, Jinlong Zhang, Jianhua Zhang, Luqiao Yin
• Format: Article
• Language: English
• Published: Hindawi Limited 2017-01-01
• Series: Advances in Materials Science and Engineering
• Online Access: http://dx.doi.org/10.1155/2017/8658164
• ISSN: 1687-8434; 1687-8442

The reliability of high-power light-emitting-diode (LED) devices strongly depends on the die-attach quality because voids may increase junction temperature and total thermal resistance of LED devices. Die-attach material has a key role in the thermal management of high-power LED package by providing low-contact thermal resistance. Thermal and mechanical analyses were carried out by experiments and thermal simulation. The quantitative analysis results show that thermal resistance of die-attach layer (thermal resistance caused by die-attach material and voids in die-attach layer) plays an important role in total thermal resistance of high-power LED packaging according to the differential structure function of thermal transient characteristics. The increase of void fraction in die-attach layer causes the increases of thermal resistance of die-attach layer; the thermal resistance increased by 1.95 K/W when the void fraction increased to 62.45%. The voids also make an obvious influence on thermal stress and thermal strain of chip; the biggest thermal stress of chip was as high as 847.1 MPa compared to the 565.2 MPa when the void fraction increases from being void-free to 30% in the die-attach layer.