Investigating positive oxide charge in the SiO2/3C-SiC MOS system

Investigating positive oxide charge in the SiO2/3C-SiC MOS system

This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by P...

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Main Authors: Karim Cherkaoui, Alan Blake, Yuri Y. Gomeniuk, Jun Lin, Brendan Sheehan, Mary White, Paul K. Hurley, Peter J. Ward
Format: Article
Language:English
Published: AIP Publishing LLC 2018-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5030636
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spelling doaj-aefaabe2923f425484c238a21be54a2e2020-11-24T20:50:46ZengAIP Publishing LLCAIP Advances2158-32262018-08-0188085323085323-810.1063/1.5030636101808ADVInvestigating positive oxide charge in the SiO2/3C-SiC MOS systemKarim Cherkaoui0Alan Blake1Yuri Y. Gomeniuk2Jun Lin3Brendan Sheehan4Mary White5Paul K. Hurley6Peter J. Ward7Tyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandANVIL Semiconductors Ltd., Coventry, UKThis paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results.http://dx.doi.org/10.1063/1.5030636
collection DOAJ
language English
format Article
sources DOAJ
author Karim Cherkaoui
Alan Blake
Yuri Y. Gomeniuk
Jun Lin
Brendan Sheehan
Mary White
Paul K. Hurley
Peter J. Ward
spellingShingle Karim Cherkaoui
Alan Blake
Yuri Y. Gomeniuk
Jun Lin
Brendan Sheehan
Mary White
Paul K. Hurley
Peter J. Ward
Investigating positive oxide charge in the SiO2/3C-SiC MOS system
AIP Advances
author_facet Karim Cherkaoui
Alan Blake
Yuri Y. Gomeniuk
Jun Lin
Brendan Sheehan
Mary White
Paul K. Hurley
Peter J. Ward
author_sort Karim Cherkaoui
title Investigating positive oxide charge in the SiO2/3C-SiC MOS system
title_short Investigating positive oxide charge in the SiO2/3C-SiC MOS system
title_full Investigating positive oxide charge in the SiO2/3C-SiC MOS system
title_fullStr Investigating positive oxide charge in the SiO2/3C-SiC MOS system
title_full_unstemmed Investigating positive oxide charge in the SiO2/3C-SiC MOS system
title_sort investigating positive oxide charge in the sio2/3c-sic mos system
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-08-01
description This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results.
url http://dx.doi.org/10.1063/1.5030636
work_keys_str_mv AT karimcherkaoui investigatingpositiveoxidechargeinthesio23csicmossystem
AT alanblake investigatingpositiveoxidechargeinthesio23csicmossystem
AT yuriygomeniuk investigatingpositiveoxidechargeinthesio23csicmossystem
AT junlin investigatingpositiveoxidechargeinthesio23csicmossystem
AT brendansheehan investigatingpositiveoxidechargeinthesio23csicmossystem
AT marywhite investigatingpositiveoxidechargeinthesio23csicmossystem
AT paulkhurley investigatingpositiveoxidechargeinthesio23csicmossystem
AT peterjward investigatingpositiveoxidechargeinthesio23csicmossystem
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