Investigating positive oxide charge in the SiO2/3C-SiC MOS system
This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by P...
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2018-08-01
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Online Access: | http://dx.doi.org/10.1063/1.5030636 |
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doaj-aefaabe2923f425484c238a21be54a2e2020-11-24T20:50:46ZengAIP Publishing LLCAIP Advances2158-32262018-08-0188085323085323-810.1063/1.5030636101808ADVInvestigating positive oxide charge in the SiO2/3C-SiC MOS systemKarim Cherkaoui0Alan Blake1Yuri Y. Gomeniuk2Jun Lin3Brendan Sheehan4Mary White5Paul K. Hurley6Peter J. Ward7Tyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandTyndall National Institute, University College Cork, Cork, IrelandANVIL Semiconductors Ltd., Coventry, UKThis paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results.http://dx.doi.org/10.1063/1.5030636 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Karim Cherkaoui Alan Blake Yuri Y. Gomeniuk Jun Lin Brendan Sheehan Mary White Paul K. Hurley Peter J. Ward |
spellingShingle |
Karim Cherkaoui Alan Blake Yuri Y. Gomeniuk Jun Lin Brendan Sheehan Mary White Paul K. Hurley Peter J. Ward Investigating positive oxide charge in the SiO2/3C-SiC MOS system AIP Advances |
author_facet |
Karim Cherkaoui Alan Blake Yuri Y. Gomeniuk Jun Lin Brendan Sheehan Mary White Paul K. Hurley Peter J. Ward |
author_sort |
Karim Cherkaoui |
title |
Investigating positive oxide charge in the SiO2/3C-SiC MOS system |
title_short |
Investigating positive oxide charge in the SiO2/3C-SiC MOS system |
title_full |
Investigating positive oxide charge in the SiO2/3C-SiC MOS system |
title_fullStr |
Investigating positive oxide charge in the SiO2/3C-SiC MOS system |
title_full_unstemmed |
Investigating positive oxide charge in the SiO2/3C-SiC MOS system |
title_sort |
investigating positive oxide charge in the sio2/3c-sic mos system |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2018-08-01 |
description |
This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by Plasma Enhanced Chemical Vapour Deposition (PECVD) on epitaxial 3C-SiC layers grown directly on Si are investigated. MOS structures with a range of oxide thickness values subjected to different thermal treatments were studied. It was found that both thermally grown and deposited SiO2 on 3C-SiC exhibit similar positive charge levels indicating that the charge originates from interface states at the 3C-SiC surface and not from the oxide. The nature of this surface charge in the SiO2/3C-SiC system is also discussed based on the current data and previously published results. |
url |
http://dx.doi.org/10.1063/1.5030636 |
work_keys_str_mv |
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