Investigating positive oxide charge in the SiO2/3C-SiC MOS system
This paper investigates the origin of the fixed positive oxide charge often experimentally observed in Metal Oxide Semiconductor (MOS) structures of SiO2 formed on cubic silicon carbide (3C-SiC). The electrical properties of MOS structures including either thermally grown SiO2 or deposited SiO2 by P...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5030636 |