Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI
This paper reports ultrahigh-sensitive and ultralow-power CMOS compatible pH sensors that are developed in the back-end-of-line (BEOL) of industrial 28-nm ultrathin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) transistors. Fabricating the sensing gate and the control gate...
Main Authors: | Getenet Tesega Ayele, Stephane Monfray, Serge Ecoffey, Frederic Boeuf, Jean-Pierre Cloarec, Dominique Drouin, Abdelkader Souifi |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8449087/ |
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