Disorder-free sputtering method on graphene
Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputterin...
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2012-09-01
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Online Access: | http://dx.doi.org/10.1063/1.4739783 |
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doaj-afc2fef8fcbd4502a4ee5f570cd5d0c92020-11-25T01:27:42ZengAIP Publishing LLCAIP Advances2158-32262012-09-0123032121032121-610.1063/1.4739783021203ADVDisorder-free sputtering method on grapheneXue Peng Qiu0Young Jun Shin1Jing Niu2Narayanapillai Kulothungasagaran3Gopinadhan Kalon4Caiyu Qiu5Ting Yu6Hyunsoo Yang7Department of Electrical and Computer Engineering, National University of Singapore, 117576, SingaporeDepartment of Electrical and Computer Engineering, National University of Singapore, 117576, SingaporeDepartment of Electrical and Computer Engineering, National University of Singapore, 117576, SingaporeDepartment of Electrical and Computer Engineering, National University of Singapore, 117576, SingaporeDepartment of Electrical and Computer Engineering, National University of Singapore, 117576, SingaporeDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637616, SingaporeGraphene Research Centre, National University of Singapore, 117546, SingaporeDepartment of Electrical and Computer Engineering, National University of Singapore, 117576, SingaporeDeposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.http://dx.doi.org/10.1063/1.4739783 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Xue Peng Qiu Young Jun Shin Jing Niu Narayanapillai Kulothungasagaran Gopinadhan Kalon Caiyu Qiu Ting Yu Hyunsoo Yang |
spellingShingle |
Xue Peng Qiu Young Jun Shin Jing Niu Narayanapillai Kulothungasagaran Gopinadhan Kalon Caiyu Qiu Ting Yu Hyunsoo Yang Disorder-free sputtering method on graphene AIP Advances |
author_facet |
Xue Peng Qiu Young Jun Shin Jing Niu Narayanapillai Kulothungasagaran Gopinadhan Kalon Caiyu Qiu Ting Yu Hyunsoo Yang |
author_sort |
Xue Peng Qiu |
title |
Disorder-free sputtering method on graphene |
title_short |
Disorder-free sputtering method on graphene |
title_full |
Disorder-free sputtering method on graphene |
title_fullStr |
Disorder-free sputtering method on graphene |
title_full_unstemmed |
Disorder-free sputtering method on graphene |
title_sort |
disorder-free sputtering method on graphene |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2012-09-01 |
description |
Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes. |
url |
http://dx.doi.org/10.1063/1.4739783 |
work_keys_str_mv |
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1725103714015903744 |