Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon...

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Main Authors:	Qingyong Ren, Chenguang Fu, Qinyi Qiu, Shengnan Dai, Zheyuan Liu, Takatsugu Masuda, Shinichiro Asai, Masato Hagihala, Sanghyun Lee, Shuki Torri, Takashi Kamiyama, Lunhua He, Xin Tong, Claudia Felser, David J. Singh, Tiejun Zhu, Jiong Yang, Jie Ma
Format:	Article
Language:	English
Published:	Nature Publishing Group 2020-06-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-020-16913-2

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spelling	doaj-b1f94823652341c4b8d740f96d55b1f32021-06-20T11:15:19ZengNature Publishing GroupNature Communications2041-17232020-06-011111910.1038/s41467-020-16913-2Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materialsQingyong Ren0Chenguang Fu1Qinyi Qiu2Shengnan Dai3Zheyuan Liu4Takatsugu Masuda5Shinichiro Asai6Masato Hagihala7Sanghyun Lee8Shuki Torri9Takashi Kamiyama10Lunhua He11Xin Tong12Claudia Felser13David J. Singh14Tiejun Zhu15Jiong Yang16Jie Ma17Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong UniversityMax Planck Institute for Chemical Physics of SolidsState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang UniversityMaterials Genome Institute, Shanghai UniversityKey Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong UniversityNeutron Science Laboratory, Institute for Solid State Physics, University of TokyoNeutron Science Laboratory, Institute for Solid State Physics, University of TokyoInstitute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of SciencesSpallation Neutron Source Science CenterMax Planck Institute for Chemical Physics of SolidsDepartment of Chemistry and Department of Physics and Astronomy, University of Missouri-ColumbiaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang UniversityMaterials Genome Institute, Shanghai UniversityKey Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong UniversityChemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering.https://doi.org/10.1038/s41467-020-16913-2
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Qingyong Ren Chenguang Fu Qinyi Qiu Shengnan Dai Zheyuan Liu Takatsugu Masuda Shinichiro Asai Masato Hagihala Sanghyun Lee Shuki Torri Takashi Kamiyama Lunhua He Xin Tong Claudia Felser David J. Singh Tiejun Zhu Jiong Yang Jie Ma
spellingShingle	Qingyong Ren Chenguang Fu Qinyi Qiu Shengnan Dai Zheyuan Liu Takatsugu Masuda Shinichiro Asai Masato Hagihala Sanghyun Lee Shuki Torri Takashi Kamiyama Lunhua He Xin Tong Claudia Felser David J. Singh Tiejun Zhu Jiong Yang Jie Ma Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials Nature Communications
author_facet	Qingyong Ren Chenguang Fu Qinyi Qiu Shengnan Dai Zheyuan Liu Takatsugu Masuda Shinichiro Asai Masato Hagihala Sanghyun Lee Shuki Torri Takashi Kamiyama Lunhua He Xin Tong Claudia Felser David J. Singh Tiejun Zhu Jiong Yang Jie Ma
author_sort	Qingyong Ren
title	Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials
title_short	Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials
title_full	Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials
title_fullStr	Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials
title_full_unstemmed	Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials
title_sort	establishing the carrier scattering phase diagram for zrnisn-based half-heusler thermoelectric materials
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2020-06-01
description	Chemical doping plays an important role in tuning carrier concentration of materials, but its influence on other aspects of electrical properties is less known. Here, the authors find that chemical doping brings strong screening effects to ionized impurities, grain boundary, and polar optical phonon scattering.
url	https://doi.org/10.1038/s41467-020-16913-2
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Establishing the carrier scattering phase diagram for ZrNiSn-based half-Heusler thermoelectric materials

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