Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope
Patterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diame...
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doaj-b2149f699e0041589eaf3ba6d40eafe62020-11-24T22:10:06ZengMDPI AGNanomaterials2079-49912019-10-01910145210.3390/nano9101452nano9101452Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical MicroscopeAgata Roszkiewicz0Amrita Jain1Marian Teodorczyk2Wojciech Nasalski3Institute of Fundamental Technological Research, Polish Academy of Sciences (IPPT PAN), Adolfa Pawińskiego 5b, 02-106 Warsaw, PolandInstitute of Fundamental Technological Research, Polish Academy of Sciences (IPPT PAN), Adolfa Pawińskiego 5b, 02-106 Warsaw, PolandInstitute of Electronic Materials Technology (ITME), Wólczyńska 133, 01-919 Warsaw, PolandInstitute of Fundamental Technological Research, Polish Academy of Sciences (IPPT PAN), Adolfa Pawińskiego 5b, 02-106 Warsaw, PolandPatterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diameter, is used as a light source. As a result, after optimization of parameters like laser power, exposure time, or sleep time, it is confirmed that it is possible to obtain a uniform nanopattern structure in the photoresist layer. In addition, the lines of holes are characterized by a uniform depth (71−87 nm) and relatively high aspect ratio ranging from 0.22 to 0.26. Numerical modelling performed with a rigorous method shows that such a structure can be potentially used as a phase zone plate.https://www.mdpi.com/2079-4991/9/10/1452optical lithographyphotoresistquartzhole nanopatterning |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Agata Roszkiewicz Amrita Jain Marian Teodorczyk Wojciech Nasalski |
spellingShingle |
Agata Roszkiewicz Amrita Jain Marian Teodorczyk Wojciech Nasalski Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope Nanomaterials optical lithography photoresist quartz hole nanopatterning |
author_facet |
Agata Roszkiewicz Amrita Jain Marian Teodorczyk Wojciech Nasalski |
author_sort |
Agata Roszkiewicz |
title |
Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope |
title_short |
Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope |
title_full |
Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope |
title_fullStr |
Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope |
title_full_unstemmed |
Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope |
title_sort |
formation and characterization of hole nanopattern on photoresist layer by scanning near-field optical microscope |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2019-10-01 |
description |
Patterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diameter, is used as a light source. As a result, after optimization of parameters like laser power, exposure time, or sleep time, it is confirmed that it is possible to obtain a uniform nanopattern structure in the photoresist layer. In addition, the lines of holes are characterized by a uniform depth (71−87 nm) and relatively high aspect ratio ranging from 0.22 to 0.26. Numerical modelling performed with a rigorous method shows that such a structure can be potentially used as a phase zone plate. |
topic |
optical lithography photoresist quartz hole nanopatterning |
url |
https://www.mdpi.com/2079-4991/9/10/1452 |
work_keys_str_mv |
AT agataroszkiewicz formationandcharacterizationofholenanopatternonphotoresistlayerbyscanningnearfieldopticalmicroscope AT amritajain formationandcharacterizationofholenanopatternonphotoresistlayerbyscanningnearfieldopticalmicroscope AT marianteodorczyk formationandcharacterizationofholenanopatternonphotoresistlayerbyscanningnearfieldopticalmicroscope AT wojciechnasalski formationandcharacterizationofholenanopatternonphotoresistlayerbyscanningnearfieldopticalmicroscope |
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1725809268504920064 |