Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition
Cerium and tin co-doped cadmium zinc sulfide nanoparticles (CdZnS:Ce)Sn were synthesized by chemical bath deposition method with a fixed concentration of Ce (3.84 mol%) and three different concentrations of Sn (2 mol % and 4 mol% and 6 mol%). They showed broad photoluminescence spectra in the visibl...
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doaj-b2d1377c243242b99aef2e819c37bc272020-11-25T02:00:27ZengSciendoMaterials Science-Poland2083-134X2019-12-0137457758410.2478/msp-2019-0067msp-2019-0067Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath depositionShrivastava Ritu0Shrivastava S.C.1Shri Shankaracharya Engineering College, Bhilai, Chhattisgarh, 490020, IndiaRungta College of Engineering & Technology, Bhilai, Chhattisgarh, 490024, IndiaCerium and tin co-doped cadmium zinc sulfide nanoparticles (CdZnS:Ce)Sn were synthesized by chemical bath deposition method with a fixed concentration of Ce (3.84 mol%) and three different concentrations of Sn (2 mol % and 4 mol% and 6 mol%). They showed broad photoluminescence spectra in the visible region under the ultraviolet excitation with a wavelength of 325 nm. The photoluminescence emission peaks were obtained at 540 nm, 560 nm and 570 nm for CdZnS, CdZnS:Ce and (CdZnS:Ce)Sn thin films, respectively having different concentrations of Sn. It has been observed that the photoluminescence emission peak shifted to higher wavelength region with an increase in intensity by Ce doping and Ce–Sn co-doping. Further enhancement in luminescence peak intensity has been observed by increasing concentration of Sn in (CdZnS:Ce)Sn films. Average crystallite size, measured from XRD data, was found to be increased with increasing concentration of Sn. An increase in the concentration of Sn shifted the UV-Vis absorption edge toward the higher wavelength side. Energy band gap for undoped CdZnS and Ce–Sn co-doped CdZnS varied from 2.608 eV to 2.405 eV. The SEM micrographs of CdZnS and (CdZnS:Ce)Sn films showed the leafy-like and ball-like structures. The presence of Sn and Ce was confirmed by EDAX analysis.http://www.degruyter.com/view/j/msp.2019.37.issue-4/msp-2019-0067/msp-2019-0067.xml?format=INTcdznschemical bath depositionthin filmsoptical properties |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Shrivastava Ritu Shrivastava S.C. |
spellingShingle |
Shrivastava Ritu Shrivastava S.C. Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition Materials Science-Poland cdzns chemical bath deposition thin films optical properties |
author_facet |
Shrivastava Ritu Shrivastava S.C. |
author_sort |
Shrivastava Ritu |
title |
Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition |
title_short |
Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition |
title_full |
Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition |
title_fullStr |
Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition |
title_full_unstemmed |
Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition |
title_sort |
thin film characterization of ce and sn co-doped cdzns by chemical bath deposition |
publisher |
Sciendo |
series |
Materials Science-Poland |
issn |
2083-134X |
publishDate |
2019-12-01 |
description |
Cerium and tin co-doped cadmium zinc sulfide nanoparticles (CdZnS:Ce)Sn were synthesized by chemical bath deposition method with a fixed concentration of Ce (3.84 mol%) and three different concentrations of Sn (2 mol % and 4 mol% and 6 mol%). They showed broad photoluminescence spectra in the visible region under the ultraviolet excitation with a wavelength of 325 nm. The photoluminescence emission peaks were obtained at 540 nm, 560 nm and 570 nm for CdZnS, CdZnS:Ce and (CdZnS:Ce)Sn thin films, respectively having different concentrations of Sn. It has been observed that the photoluminescence emission peak shifted to higher wavelength region with an increase in intensity by Ce doping and Ce–Sn co-doping. Further enhancement in luminescence peak intensity has been observed by increasing concentration of Sn in (CdZnS:Ce)Sn films. Average crystallite size, measured from XRD data, was found to be increased with increasing concentration of Sn. An increase in the concentration of Sn shifted the UV-Vis absorption edge toward the higher wavelength side. Energy band gap for undoped CdZnS and Ce–Sn co-doped CdZnS varied from 2.608 eV to 2.405 eV. The SEM micrographs of CdZnS and (CdZnS:Ce)Sn films showed the leafy-like and ball-like structures. The presence of Sn and Ce was confirmed by EDAX analysis. |
topic |
cdzns chemical bath deposition thin films optical properties |
url |
http://www.degruyter.com/view/j/msp.2019.37.issue-4/msp-2019-0067/msp-2019-0067.xml?format=INT |
work_keys_str_mv |
AT shrivastavaritu thinfilmcharacterizationofceandsncodopedcdznsbychemicalbathdeposition AT shrivastavasc thinfilmcharacterizationofceandsncodopedcdznsbychemicalbathdeposition |
_version_ |
1724960509600464896 |