Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition

Cerium and tin co-doped cadmium zinc sulfide nanoparticles (CdZnS:Ce)Sn were synthesized by chemical bath deposition method with a fixed concentration of Ce (3.84 mol%) and three different concentrations of Sn (2 mol % and 4 mol% and 6 mol%). They showed broad photoluminescence spectra in the visibl...

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Main Authors: Shrivastava Ritu, Shrivastava S.C.
Format: Article
Language:English
Published: Sciendo 2019-12-01
Series:Materials Science-Poland
Subjects:
Online Access:http://www.degruyter.com/view/j/msp.2019.37.issue-4/msp-2019-0067/msp-2019-0067.xml?format=INT
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spelling doaj-b2d1377c243242b99aef2e819c37bc272020-11-25T02:00:27ZengSciendoMaterials Science-Poland2083-134X2019-12-0137457758410.2478/msp-2019-0067msp-2019-0067Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath depositionShrivastava Ritu0Shrivastava S.C.1Shri Shankaracharya Engineering College, Bhilai, Chhattisgarh, 490020, IndiaRungta College of Engineering & Technology, Bhilai, Chhattisgarh, 490024, IndiaCerium and tin co-doped cadmium zinc sulfide nanoparticles (CdZnS:Ce)Sn were synthesized by chemical bath deposition method with a fixed concentration of Ce (3.84 mol%) and three different concentrations of Sn (2 mol % and 4 mol% and 6 mol%). They showed broad photoluminescence spectra in the visible region under the ultraviolet excitation with a wavelength of 325 nm. The photoluminescence emission peaks were obtained at 540 nm, 560 nm and 570 nm for CdZnS, CdZnS:Ce and (CdZnS:Ce)Sn thin films, respectively having different concentrations of Sn. It has been observed that the photoluminescence emission peak shifted to higher wavelength region with an increase in intensity by Ce doping and Ce–Sn co-doping. Further enhancement in luminescence peak intensity has been observed by increasing concentration of Sn in (CdZnS:Ce)Sn films. Average crystallite size, measured from XRD data, was found to be increased with increasing concentration of Sn. An increase in the concentration of Sn shifted the UV-Vis absorption edge toward the higher wavelength side. Energy band gap for undoped CdZnS and Ce–Sn co-doped CdZnS varied from 2.608 eV to 2.405 eV. The SEM micrographs of CdZnS and (CdZnS:Ce)Sn films showed the leafy-like and ball-like structures. The presence of Sn and Ce was confirmed by EDAX analysis.http://www.degruyter.com/view/j/msp.2019.37.issue-4/msp-2019-0067/msp-2019-0067.xml?format=INTcdznschemical bath depositionthin filmsoptical properties
collection DOAJ
language English
format Article
sources DOAJ
author Shrivastava Ritu
Shrivastava S.C.
spellingShingle Shrivastava Ritu
Shrivastava S.C.
Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition
Materials Science-Poland
cdzns
chemical bath deposition
thin films
optical properties
author_facet Shrivastava Ritu
Shrivastava S.C.
author_sort Shrivastava Ritu
title Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition
title_short Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition
title_full Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition
title_fullStr Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition
title_full_unstemmed Thin film characterization of Ce and Sn co-doped CdZnS by chemical bath deposition
title_sort thin film characterization of ce and sn co-doped cdzns by chemical bath deposition
publisher Sciendo
series Materials Science-Poland
issn 2083-134X
publishDate 2019-12-01
description Cerium and tin co-doped cadmium zinc sulfide nanoparticles (CdZnS:Ce)Sn were synthesized by chemical bath deposition method with a fixed concentration of Ce (3.84 mol%) and three different concentrations of Sn (2 mol % and 4 mol% and 6 mol%). They showed broad photoluminescence spectra in the visible region under the ultraviolet excitation with a wavelength of 325 nm. The photoluminescence emission peaks were obtained at 540 nm, 560 nm and 570 nm for CdZnS, CdZnS:Ce and (CdZnS:Ce)Sn thin films, respectively having different concentrations of Sn. It has been observed that the photoluminescence emission peak shifted to higher wavelength region with an increase in intensity by Ce doping and Ce–Sn co-doping. Further enhancement in luminescence peak intensity has been observed by increasing concentration of Sn in (CdZnS:Ce)Sn films. Average crystallite size, measured from XRD data, was found to be increased with increasing concentration of Sn. An increase in the concentration of Sn shifted the UV-Vis absorption edge toward the higher wavelength side. Energy band gap for undoped CdZnS and Ce–Sn co-doped CdZnS varied from 2.608 eV to 2.405 eV. The SEM micrographs of CdZnS and (CdZnS:Ce)Sn films showed the leafy-like and ball-like structures. The presence of Sn and Ce was confirmed by EDAX analysis.
topic cdzns
chemical bath deposition
thin films
optical properties
url http://www.degruyter.com/view/j/msp.2019.37.issue-4/msp-2019-0067/msp-2019-0067.xml?format=INT
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