Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation

Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation

This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, P...

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Main Authors: Gim Heng Tan, Roslina Mohd Sidek, Harikrishnan Ramiah, Wei Keat Chong, De Xing Lioe
Format: Article
Language:English
Published: Hindawi Limited 2014-01-01
Series:The Scientific World Journal
Online Access:http://dx.doi.org/10.1155/2014/163414
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spelling doaj-b3456986411f4399bf3022a47dfb04422020-11-24T21:44:26ZengHindawi LimitedThe Scientific World Journal2356-61401537-744X2014-01-01201410.1155/2014/163414163414Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF IsolationGim Heng Tan0Roslina Mohd Sidek1Harikrishnan Ramiah2Wei Keat Chong3De Xing Lioe4Department of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, MalaysiaDepartment of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, MalaysiaDepartment of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, MalaysiaDepartment of Electrical and Electronic Engineering, Universiti Putra Malaysia, 43400 Serdang, MalaysiaThis journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2.http://dx.doi.org/10.1155/2014/163414
collection DOAJ
language English
format Article
sources DOAJ
author Gim Heng Tan
Roslina Mohd Sidek
Harikrishnan Ramiah
Wei Keat Chong
De Xing Lioe
spellingShingle Gim Heng Tan
Roslina Mohd Sidek
Harikrishnan Ramiah
Wei Keat Chong
De Xing Lioe
Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation
The Scientific World Journal
author_facet Gim Heng Tan
Roslina Mohd Sidek
Harikrishnan Ramiah
Wei Keat Chong
De Xing Lioe
author_sort Gim Heng Tan
title Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation
title_short Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation
title_full Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation
title_fullStr Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation
title_full_unstemmed Ultra-Low-Voltage CMOS-Based Current Bleeding Mixer with High LO-RF Isolation
title_sort ultra-low-voltage cmos-based current bleeding mixer with high lo-rf isolation
publisher Hindawi Limited
series The Scientific World Journal
issn 2356-6140
1537-744X
publishDate 2014-01-01
description This journal presents an ultra-low-voltage current bleeding mixer with high LO-RF port-to-port isolation, implemented on 0.13 μm standard CMOS technology for ZigBee application. The architecture compliments a modified current bleeding topology, consisting of NMOS-based current bleeding transistor, PMOS-based switching stage, and integrated inductors achieving low-voltage operation and high LO-RF isolation. The mixer exhibits a conversion gain of 7.5 dB at the radio frequency (RF) of 2.4 GHz, an input third-order intercept point (IIP3) of 1 dBm, and a LO-RF isolation measured to 60 dB. The DC power consumption is 572 µW at supply voltage of 0.45 V, while consuming a chip area of 0.97 × 0.88 mm2.
url http://dx.doi.org/10.1155/2014/163414
work_keys_str_mv AT gimhengtan ultralowvoltagecmosbasedcurrentbleedingmixerwithhighlorfisolation
AT roslinamohdsidek ultralowvoltagecmosbasedcurrentbleedingmixerwithhighlorfisolation
AT harikrishnanramiah ultralowvoltagecmosbasedcurrentbleedingmixerwithhighlorfisolation
AT weikeatchong ultralowvoltagecmosbasedcurrentbleedingmixerwithhighlorfisolation
AT dexinglioe ultralowvoltagecmosbasedcurrentbleedingmixerwithhighlorfisolation
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