Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer

• Main Authors: Wenting Zhang, Xiaoxing Guo, Jinchao Yin, Jianhong Yang
• Format: Article
• Language: English
• Published: MDPI AG 2020-05-01
• Series: Electronics
• Subjects: organic field-effect transistor memory device; carbon quantum dots; integrated hybrid nanolayer; memory window modulation
• Online Access: https://www.mdpi.com/2079-9292/9/5/753

In this work, we present a pentacene-based organic field-effect transistor memory (OFETM) device, which employs one-step microwave-assisted hydrothermal carbon quantum dots (CQDs) embedded in a polyvinyl pyrrolidone (PVP) matrix, to form an integrated hybrid nanolayer as the charge trapping layer. The as-prepared CQDs are quasi-spherical amorphous C, with sizes ranging from 5 to 20 nm, with a number of oxygen-containing groups and likely some graphite-like domains that produce CQDs with excellent electron-withdrawing characteristics. The incorporation of CQDs into PVP dielectric materials results in a bidirectional storage property. By optimizing the concentration of CQDs embedded into the PVP matrix, the OFETM shows excellent memory characteristics with a large memory window of 8.41 V under a programming/erasing (P/E) voltage of <inline-formula> <math display="inline"> <semantics> <mo>±</mo> </semantics> </math> </inline-formula>60 V and a retention time of up to 10⁴ s.