Study on the Effect of γ-Irradiation on Gadolinium Oxysulfide Nanophosphors (Gd2O2S-NPs)

Gadolinium oxysulfide nanophosphors (Gd2O2S-NPs) have been successfully synthesized using γ-irradiation and hydrogenation treatment. The primary stage of Gd2O2S-NPs synthesis was carried out using various doses of γ-irradiation to form diverse sizes of Gd2(SO4)3 precursor, followed by hydrogenation...

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Bibliographic Details
Main Authors: Muhammad Hassyakirin Hasim, Irman Abdul Rahman, Sapizah Rahim, Muhammad Taqiyuddin Mawardi Ayob, Shamellia Sharin, Shahidan Radiman
Format: Article
Language:English
Published: Hindawi Limited 2017-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2017/7431432
Description
Summary:Gadolinium oxysulfide nanophosphors (Gd2O2S-NPs) have been successfully synthesized using γ-irradiation and hydrogenation treatment. The primary stage of Gd2O2S-NPs synthesis was carried out using various doses of γ-irradiation to form diverse sizes of Gd2(SO4)3 precursor, followed by hydrogenation treatment at 900°C for 2 hours to form Gd2O2S-NPs. Then, the nanophosphors were characterized for the structure, morphology, and luminescence properties through X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and photoluminescence spectrometer (PL). Pure hexagonal phase of Gd2O2S-NPs was obtained with high crystallinity and without any impurities. The morphologies were observed from grain-like nanostructures transformed to spherical shape as the irradiation dose reached 40 kGy. Besides, Gd2O2S-NPs which were prepared at highest irradiation dose of 40 kGy show highest intensity of emission peak at 548 nm and corresponded to Stark level transition from the GJ6 state of Gd3+ ion. It can be emphasized that the different doses of γ-irradiation influenced the nucleation event of Gd2(SO4)3 precursor thus affecting the morphology and size particles of Gd2O2S-NPs. Hence, from the results, it can be suggested that Gd2O2S-NPs can be a promising host for optical applications.
ISSN:1687-4110
1687-4129