Intraband divergences in third order optical response of 2D systems

• Main Authors: J. L. Cheng, J. E. Sipe, S. W. Wu, Chunlei Guo
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2019-03-01
• Series: APL Photonics
• Online Access: http://dx.doi.org/10.1063/1.5053715

The existence of large nonlinear optical coefficients is one of the preconditions for using nonlinear optical materials in nonlinear optical devices. For a crystal, such large coefficients can be achieved by matching photon energies with resonant energies between different bands, and so the details of the crystal band structure play an important role. Here we demonstrate that large third-order nonlinearities can also be generally obtained by a different strategy. As any of the incident frequencies or the sum of any two or three frequencies approaches zero, the doped or excited populations of electronic states lead to divergent contributions in the induced current density. We refer to these as intraband divergences, by analogy with the behavior of Drude conductivity in linear response. Physically, such resonant processes can be associated with a combination of intraband and interband optical transitions. Current-induced second order nonlinearity, coherent current injection, and jerk currents are all related to such divergences, and we find similar divergences in degenerate four wave mixing and cross-phase modulation under certain conditions. These divergences are limited by intraband relaxation parameters and lead to a large optical response from a high quality sample; we find that they are very robust with respect to variations in the details of the band structure. To clearly track all of these effects, we analyze gapped graphene, describing the electrons as massive Dirac fermions; under the relaxation time approximation, we derive analytic expressions for the third order conductivities and identify the divergences that arise in describing the associated nonlinear phenomena.