Growth and gas exchanges of arugula plants under silicon fertilization and water restriction

• Main Authors: Edmar G. de Jesus, Reynaldo T. de Fatima, Amaralina C. Guerrero, Josinaldo L. de Araújo, Marcos E. B. Brito
• Format: Article
• Language: English
• Published: Universidade Federal de Campina Grande
• Series: Revista Brasileira de Engenharia Agrícola e Ambiental - Agriambi
• Subjects: Eruca sativa Miller; water use efficiency; silicon
• Online Access: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1415-43662018000200119&lng=en&tlng=en

ABSTRACT The objective of this article was to study the growth and gas exchange of arugula plants under silicon (Si) fertilization and water stress. The experiment was installed in a greenhouse, located in the municipality of Pombal, PB, Brazil, whose geographic coordinates are 6º 46 ‘S latitude and 37º 49’ W longitude and 178 m of altitude, situated in the 'Sertão Paraibano' micro-region. The experimental design was in randomized blocks, in 5 x 2 factorial scheme, corresponding to five Si doses (0, 50, 100, 150 and 200 mg L-1) and two irrigation depths [50 and 100% of real evapotranspiration (ETr) based on weighing lysimeter], with four replicates. Silicon application was performed as foliar spray, using a commercial product composed of 0.75% Si and 0.15% Mo. Arugula growth and gas exchange was evaluated. Higher values for number of leaves and plant height were obtained in plants cultivated under 100% ETr. Silicon application between 100 and 120 mg L-1 led to better results in the physiological variables of arugula plants under water stress. Silicon application between 30 and 60 mg L-1 in arugula plants under 100% ETr irrigation allowed greater phytomass accumulation.