Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity

Here we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ∼35 μW cm−1 K−2...

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Main Authors: Ran He, Lihong Huang, Yumei Wang, Georgy Samsonidze, Boris Kozinsky, Qinyong Zhang, Zhifeng Ren
Format: Article
Language:English
Published: AIP Publishing LLC 2016-10-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4952994
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spelling doaj-ba4fc4c3eb99409b980833de58c04edb2020-11-24T23:59:52ZengAIP Publishing LLCAPL Materials2166-532X2016-10-01410104804104804-910.1063/1.4952994005695APMEnhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purityRan He0Lihong Huang1Yumei Wang2Georgy Samsonidze3Boris Kozinsky4Qinyong Zhang5Zhifeng Ren6Department of Physics and TcSUH, University of Houston, Houston, Texas 77204, USACenter for Advanced Materials and Energy, Xihua University, Chengdu, Sichuan 610039, ChinaDepartment of Physics and TcSUH, University of Houston, Houston, Texas 77204, USARobert Bosch LLC, Research and Technology Center, Cambridge, Massachusetts 02139, USARobert Bosch LLC, Research and Technology Center, Cambridge, Massachusetts 02139, USACenter for Advanced Materials and Energy, Xihua University, Chengdu, Sichuan 610039, ChinaDepartment of Physics and TcSUH, University of Houston, Houston, Texas 77204, USAHere we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ∼35 μW cm−1 K−2 and figure of merit (ZT) value ∼0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W−1) is decreased by ∼68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.http://dx.doi.org/10.1063/1.4952994
collection DOAJ
language English
format Article
sources DOAJ
author Ran He
Lihong Huang
Yumei Wang
Georgy Samsonidze
Boris Kozinsky
Qinyong Zhang
Zhifeng Ren
spellingShingle Ran He
Lihong Huang
Yumei Wang
Georgy Samsonidze
Boris Kozinsky
Qinyong Zhang
Zhifeng Ren
Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
APL Materials
author_facet Ran He
Lihong Huang
Yumei Wang
Georgy Samsonidze
Boris Kozinsky
Qinyong Zhang
Zhifeng Ren
author_sort Ran He
title Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
title_short Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
title_full Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
title_fullStr Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
title_full_unstemmed Enhanced thermoelectric properties of n-type NbCoSn half-Heusler by improving phase purity
title_sort enhanced thermoelectric properties of n-type nbcosn half-heusler by improving phase purity
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2016-10-01
description Here we report the thermoelectric properties of NbCoSn-based n-type half-Heuslers (HHs) that were obtained through arc melting, ball milling, and hot pressing process. With 10% Sb substitution at the Sn site, we obtained enhanced n-type properties with a maximum power factor reaching ∼35 μW cm−1 K−2 and figure of merit (ZT) value ∼0.6 in NbCoSn0.9Sb0.1. The ZT is doubled compared to the previous report. In addition, the specific power cost ($ W−1) is decreased by ∼68% comparing to HfNiSn-based n-type HH because of the elimination of Hf.
url http://dx.doi.org/10.1063/1.4952994
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AT georgysamsonidze enhancedthermoelectricpropertiesofntypenbcosnhalfheuslerbyimprovingphasepurity
AT boriskozinsky enhancedthermoelectricpropertiesofntypenbcosnhalfheuslerbyimprovingphasepurity
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