The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS
Both CMOS bandgap voltage references and temperature sensors rely on the temperature behavior of either CMOS substrate BJTs or MOS transistors in weak inversion. Bipolar transistors are generally preferred over MOS transistors because of their lower spread. However, at deep-cryogenic temperatures, t...
Main Authors: | Harald Homulle, Lin Song, Edoardo Charbon, Fabio Sebastiano |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8269294/ |
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