Polarization Enhanced GaN Avalanche Photodiodes With p-type In0.05Ga0.95N Layer

In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In0.05Ga0.95N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In0.05Ga0.95N...

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Main Authors:	Haiping Wang, Haifan You, Danfeng Pan, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Format:	Article
Language:	English
Published:	IEEE 2020-01-01
Series:	IEEE Photonics Journal
Subjects:	GaN avalanche photodiodes p-type In<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.05}$</tex-math> </inline-formula>Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.95}$</tex-math> </inline-formula>N polarization hole concentration Silvaco
Online Access:	https://ieeexplore.ieee.org/document/8972413/

id	doaj-ba67cacf3a5446db89cc5366257ef8cf
record_format	Article
spelling	doaj-ba67cacf3a5446db89cc5366257ef8cf2021-03-29T17:58:07ZengIEEEIEEE Photonics Journal1943-06552020-01-011211610.1109/JPHOT.2020.29699918972413Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N LayerHaiping Wang0Haifan You1https://orcid.org/0000-0003-0099-6074Danfeng Pan2Dunjun Chen3Hai Lu4https://orcid.org/0000-0002-9835-6763Rong Zhang5Youdou Zheng6Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaKey Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, ChinaIn this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In<sub>0.05</sub>Ga<sub>0.95</sub>N layer generates a negative polarization charge at the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N/i-GaN heterojunction interface via the piezoelectric polarization effect. Three times higher hole concentration in the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N layer is obtained due to the smaller activation energy of the Mg dopant. Induced polarization charge and increased hole concentration work together to reduce the voltage drop in the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N layer and enhance the electric field intensity in the i-GaN layer. The calculated results show that the heterostructure APD demonstrates a reduced operating voltage of more than 26 V and an improved multiplication gain by an order of magnitude in comparison to the conventional one.https://ieeexplore.ieee.org/document/8972413/GaNavalanche photodiodesp-type In<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.05}$</tex-math> </inline-formula>Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.95}$</tex-math> </inline-formula>Npolarizationhole concentrationSilvaco
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Haiping Wang Haifan You Danfeng Pan Dunjun Chen Hai Lu Rong Zhang Youdou Zheng
spellingShingle	Haiping Wang Haifan You Danfeng Pan Dunjun Chen Hai Lu Rong Zhang Youdou Zheng Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer IEEE Photonics Journal GaN avalanche photodiodes p-type In<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.05}$</tex-math> </inline-formula>Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.95}$</tex-math> </inline-formula>N polarization hole concentration Silvaco
author_facet	Haiping Wang Haifan You Danfeng Pan Dunjun Chen Hai Lu Rong Zhang Youdou Zheng
author_sort	Haiping Wang
title	Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer
title_short	Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer
title_full	Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer
title_fullStr	Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer
title_full_unstemmed	Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer
title_sort	polarization enhanced gan avalanche photodiodes with p-type in<sub>0.05</sub>ga<sub>0.95</sub>n layer
publisher	IEEE
series	IEEE Photonics Journal
issn	1943-0655
publishDate	2020-01-01
description	In this letter, novel heterostructure p-i-n GaN avalanche photodiodes (APDs) with p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N layer are proposed and analyzed through Silvaco Atlas simulations. The introduction of the In<sub>0.05</sub>Ga<sub>0.95</sub>N layer generates a negative polarization charge at the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N/i-GaN heterojunction interface via the piezoelectric polarization effect. Three times higher hole concentration in the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N layer is obtained due to the smaller activation energy of the Mg dopant. Induced polarization charge and increased hole concentration work together to reduce the voltage drop in the p-In<sub>0.05</sub>Ga<sub>0.95</sub>N layer and enhance the electric field intensity in the i-GaN layer. The calculated results show that the heterostructure APD demonstrates a reduced operating voltage of more than 26 V and an improved multiplication gain by an order of magnitude in comparison to the conventional one.
topic	GaN avalanche photodiodes p-type In<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.05}$</tex-math> </inline-formula>Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$_{0.95}$</tex-math> </inline-formula>N polarization hole concentration Silvaco
url	https://ieeexplore.ieee.org/document/8972413/
work_keys_str_mv	AT haipingwang polarizationenhancedganavalanchephotodiodeswithptypeinsub005subgasub095subnlayer AT haifanyou polarizationenhancedganavalanchephotodiodeswithptypeinsub005subgasub095subnlayer AT danfengpan polarizationenhancedganavalanchephotodiodeswithptypeinsub005subgasub095subnlayer AT dunjunchen polarizationenhancedganavalanchephotodiodeswithptypeinsub005subgasub095subnlayer AT hailu polarizationenhancedganavalanchephotodiodeswithptypeinsub005subgasub095subnlayer AT rongzhang polarizationenhancedganavalanchephotodiodeswithptypeinsub005subgasub095subnlayer AT youdouzheng polarizationenhancedganavalanchephotodiodeswithptypeinsub005subgasub095subnlayer
_version_	1724196980178026496

Polarization Enhanced GaN Avalanche Photodiodes With p-type In<sub>0.05</sub>Ga<sub>0.95</sub>N Layer

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