Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization Process
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS<sub>2</sub>) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has cove...
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doaj-ba7ad53f86fd44ca89cced1d117018132020-12-22T00:02:24ZengMDPI AGSensors1424-82202020-12-01207340734010.3390/s20247340Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization ProcessYoonsok Kim0Taeyoung Kim1Eun Kyu Kim2Department of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, KoreaDepartment of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, KoreaDepartment of Physics and Research Institute of Natural Science, Hanyang University, Seoul 04763, KoreaTwo-dimensional (2D) materials, such as molybdenum disulfide (MoS<sub>2</sub>) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS<sub>2</sub>/p-Si heterojunction structure by sulfurization of MoO<sub>x</sub> film, which is thermally evaporated on p-type silicon substrate. The n-MoS<sub>2</sub>/p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 10<sup>4</sup>. Photoresponsivity and detectivity of the diode showed up to 475 mA/W and 6.5 × 10<sup>11</sup> Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS<sub>2</sub> can be applicable to next-generation electronic and optoelectronic devices.https://www.mdpi.com/1424-8220/20/24/7340MoS<sub>2</sub>transition metal dichalcogenideheterojunctionphotodiode |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yoonsok Kim Taeyoung Kim Eun Kyu Kim |
spellingShingle |
Yoonsok Kim Taeyoung Kim Eun Kyu Kim Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization Process Sensors MoS<sub>2</sub> transition metal dichalcogenide heterojunction photodiode |
author_facet |
Yoonsok Kim Taeyoung Kim Eun Kyu Kim |
author_sort |
Yoonsok Kim |
title |
Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization Process |
title_short |
Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization Process |
title_full |
Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization Process |
title_fullStr |
Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization Process |
title_full_unstemmed |
Photoelectric Characteristics of a Large-Area n-MoS<sub>2</sub>/p-Si Heterojunction Structure Formed through Sulfurization Process |
title_sort |
photoelectric characteristics of a large-area n-mos<sub>2</sub>/p-si heterojunction structure formed through sulfurization process |
publisher |
MDPI AG |
series |
Sensors |
issn |
1424-8220 |
publishDate |
2020-12-01 |
description |
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS<sub>2</sub>) of the transition metal dichalcogenides family, are widely investigated because of their outstanding electrical and optical properties. However, not much of the 2D materials research completed to date has covered large-area structures comprised of high-quality heterojunction diodes. We fabricated a large-area n-MoS<sub>2</sub>/p-Si heterojunction structure by sulfurization of MoO<sub>x</sub> film, which is thermally evaporated on p-type silicon substrate. The n-MoS<sub>2</sub>/p-Si structure possessed excellent diode characteristics such as ideality factor of 1.53 and rectification ratio in excess of 10<sup>4</sup>. Photoresponsivity and detectivity of the diode showed up to 475 mA/W and 6.5 × 10<sup>11</sup> Jones, respectively, in wavelength ranges from visible to near-infrared. The device appeared also the maximum external quantum efficiency of 72%. The rise and decay times of optical transient response were measured about 19.78 ms and 0.99 ms, respectively. These results suggest that the sulfurization process for large-area 2D heterojunction with MoS<sub>2</sub> can be applicable to next-generation electronic and optoelectronic devices. |
topic |
MoS<sub>2</sub> transition metal dichalcogenide heterojunction photodiode |
url |
https://www.mdpi.com/1424-8220/20/24/7340 |
work_keys_str_mv |
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