Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.

Bibliographic Details
Main Authors:	Michael Zürch, Hung-Tzu Chang, Lauren J. Borja, Peter M. Kraus, Scott K. Cushing, Andrey Gandman, Christopher J. Kaplan, Myoung Hwan Oh, James S. Prell, David Prendergast, Chaitanya D. Pemmaraju, Daniel M. Neumark, Stephen R. Leone
Format:	Article
Language:	English
Published:	Nature Publishing Group 2017-06-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/ncomms15734

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spelling	doaj-ba8b426c8d0649ac9d05e3e3d3d83dc72021-05-11T07:16:56ZengNature Publishing GroupNature Communications2041-17232017-06-018111110.1038/ncomms15734Direct and simultaneous observation of ultrafast electron and hole dynamics in germaniumMichael Zürch0Hung-Tzu Chang1Lauren J. Borja2Peter M. Kraus3Scott K. Cushing4Andrey Gandman5Christopher J. Kaplan6Myoung Hwan Oh7James S. Prell8David Prendergast9Chaitanya D. Pemmaraju10Daniel M. Neumark11Stephen R. Leone12Department of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyThe Molecular Foundry, Lawrence Berkeley National LaboratoryThe Molecular Foundry, Lawrence Berkeley National LaboratoryDepartment of Chemistry, University of California at BerkeleyDepartment of Chemistry, University of California at BerkeleyUnderstanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.https://doi.org/10.1038/ncomms15734
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Michael Zürch Hung-Tzu Chang Lauren J. Borja Peter M. Kraus Scott K. Cushing Andrey Gandman Christopher J. Kaplan Myoung Hwan Oh James S. Prell David Prendergast Chaitanya D. Pemmaraju Daniel M. Neumark Stephen R. Leone
spellingShingle	Michael Zürch Hung-Tzu Chang Lauren J. Borja Peter M. Kraus Scott K. Cushing Andrey Gandman Christopher J. Kaplan Myoung Hwan Oh James S. Prell David Prendergast Chaitanya D. Pemmaraju Daniel M. Neumark Stephen R. Leone Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium Nature Communications
author_facet	Michael Zürch Hung-Tzu Chang Lauren J. Borja Peter M. Kraus Scott K. Cushing Andrey Gandman Christopher J. Kaplan Myoung Hwan Oh James S. Prell David Prendergast Chaitanya D. Pemmaraju Daniel M. Neumark Stephen R. Leone
author_sort	Michael Zürch
title	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_short	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_full	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_fullStr	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_full_unstemmed	Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
title_sort	direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
publisher	Nature Publishing Group
series	Nature Communications
issn	2041-1723
publishDate	2017-06-01
description	Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.
url	https://doi.org/10.1038/ncomms15734
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Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium

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