Direct and simultaneous observation of ultrafast electron and hole dynamics in germanium
Understanding excited carrier dynamics in semiconductors is central to the continued development of optoelectronic devices. Using extreme ultraviolet transient absorption spectroscopy, Zürchet al. directly and simultaneously observe ultrafast electron and hole dynamics in germanium thin films.
| Main Authors: | , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2017-06-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms15734 |