Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz

A silicon-based phased-array transmitter working at 100 GHz is proposed in this study. Planar array ferroelectric film phase shifters (FPSs) are realised with patch antennas, DC bias lines, microstrip lines and power dividers on a monolithic silicon substrate. The system enables full process compati...

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Main Authors: Jingtian Liu, Shuming Chen, Hui Huang, Ke Xiao, Xiaowen Chen
Format: Article
Language:English
Published: Wiley 2019-07-01
Series:The Journal of Engineering
Subjects:
Online Access:https://digital-library.theiet.org/content/journals/10.1049/joe.2019.0239
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spelling doaj-bc49b813167744dfa035bd9d3048ed382021-04-02T13:20:34ZengWileyThe Journal of Engineering2051-33052019-07-0110.1049/joe.2019.0239JOE.2019.0239Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHzJingtian Liu0Shuming Chen1Hui Huang2Ke Xiao3Xiaowen Chen4College of Computer, National University of Defense TechnologyCollege of Computer, National University of Defense TechnologyXinchen Technologies Company, Ltd.College of Electronic Science and Engineering, National University of Defense TechnologyCollege of Computer, National University of Defense TechnologyA silicon-based phased-array transmitter working at 100 GHz is proposed in this study. Planar array ferroelectric film phase shifters (FPSs) are realised with patch antennas, DC bias lines, microstrip lines and power dividers on a monolithic silicon substrate. The system enables full process compatibility and avoids loss caused by multichip interconnection. The isolation layer uses benzocyclobutene polymer film with low permittivity and low loss tangent, providing large thickness physical isolation. The FPS has a compact length of 0.45 mm, and simulation results show that its phase shift degree at 100 GHz is 125.7° with 3.95 dB insertion loss and 11.4 dB reflection loss. The patch antenna shows that the maximum simulated radiation gain of the single antenna is 4 dBi and the four-element antenna array is 9.7 dBi at 100 GHz. The beam can be steered to ±10°. The proposed system lays an important foundation for the realisation of silicon-based system-on-chip radar RF front-end system.https://digital-library.theiet.org/content/journals/10.1049/joe.2019.0239power dividersantenna phased arrayspolymer filmsradar transmittersmicrostrip linesmicrostrip antennasphased array radarphase shiftersmicrostrip antenna arrayssiliconpermittivitymillimetre wave antenna arraysferroelectric thin filmsmicrowave phase shiftersferroelectric devicesmicrowave integrated circuitssystem-on-chipmillimetre wave radarbenzocyclobutene polymer filmfour-element antenna arraysilicon-based system-on-chip radar RF front-end systemsilicon-based on-chip four-channel phased-array radar transmitterferroelectric thin filmsilicon-based phased-array transmitterplanar array ferroelectric film phase shiftersDC bias linesmicrostrip linesmonolithic silicon substrateferroelectric film phase shifterspatch antennaspower dividerslow permittivity polymer filmlow loss tangent polymer filmfrequency 100.0 GHzsize 0.45 mmloss 3.95 dB
collection DOAJ
language English
format Article
sources DOAJ
author Jingtian Liu
Shuming Chen
Hui Huang
Ke Xiao
Xiaowen Chen
spellingShingle Jingtian Liu
Shuming Chen
Hui Huang
Ke Xiao
Xiaowen Chen
Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz
The Journal of Engineering
power dividers
antenna phased arrays
polymer films
radar transmitters
microstrip lines
microstrip antennas
phased array radar
phase shifters
microstrip antenna arrays
silicon
permittivity
millimetre wave antenna arrays
ferroelectric thin films
microwave phase shifters
ferroelectric devices
microwave integrated circuits
system-on-chip
millimetre wave radar
benzocyclobutene polymer film
four-element antenna array
silicon-based system-on-chip radar RF front-end system
silicon-based on-chip four-channel phased-array radar transmitter
ferroelectric thin film
silicon-based phased-array transmitter
planar array ferroelectric film phase shifters
DC bias lines
microstrip lines
monolithic silicon substrate
ferroelectric film phase shifters
patch antennas
power dividers
low permittivity polymer film
low loss tangent polymer film
frequency 100.0 GHz
size 0.45 mm
loss 3.95 dB
author_facet Jingtian Liu
Shuming Chen
Hui Huang
Ke Xiao
Xiaowen Chen
author_sort Jingtian Liu
title Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz
title_short Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz
title_full Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz
title_fullStr Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz
title_full_unstemmed Silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 GHz
title_sort silicon-based on-chip four-channel phased-array radar transmitter with ferroelectric thin film at 100 ghz
publisher Wiley
series The Journal of Engineering
issn 2051-3305
publishDate 2019-07-01
description A silicon-based phased-array transmitter working at 100 GHz is proposed in this study. Planar array ferroelectric film phase shifters (FPSs) are realised with patch antennas, DC bias lines, microstrip lines and power dividers on a monolithic silicon substrate. The system enables full process compatibility and avoids loss caused by multichip interconnection. The isolation layer uses benzocyclobutene polymer film with low permittivity and low loss tangent, providing large thickness physical isolation. The FPS has a compact length of 0.45 mm, and simulation results show that its phase shift degree at 100 GHz is 125.7° with 3.95 dB insertion loss and 11.4 dB reflection loss. The patch antenna shows that the maximum simulated radiation gain of the single antenna is 4 dBi and the four-element antenna array is 9.7 dBi at 100 GHz. The beam can be steered to ±10°. The proposed system lays an important foundation for the realisation of silicon-based system-on-chip radar RF front-end system.
topic power dividers
antenna phased arrays
polymer films
radar transmitters
microstrip lines
microstrip antennas
phased array radar
phase shifters
microstrip antenna arrays
silicon
permittivity
millimetre wave antenna arrays
ferroelectric thin films
microwave phase shifters
ferroelectric devices
microwave integrated circuits
system-on-chip
millimetre wave radar
benzocyclobutene polymer film
four-element antenna array
silicon-based system-on-chip radar RF front-end system
silicon-based on-chip four-channel phased-array radar transmitter
ferroelectric thin film
silicon-based phased-array transmitter
planar array ferroelectric film phase shifters
DC bias lines
microstrip lines
monolithic silicon substrate
ferroelectric film phase shifters
patch antennas
power dividers
low permittivity polymer film
low loss tangent polymer film
frequency 100.0 GHz
size 0.45 mm
loss 3.95 dB
url https://digital-library.theiet.org/content/journals/10.1049/joe.2019.0239
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