Bell-state tomography in a silicon many-electron artificial molecule
Multielectron quantum dots offer a promising platform for high-performance spin qubits; however, previous demonstrations have been limited to single-qubit operation. Here, the authors report a universal gate set and two-qubit Bell state tomography in a high-occupancy double quantum dot in silicon.
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2021-05-01
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Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/s41467-021-23437-w |
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doaj-bcc6602230604d6aba9fffb42a4b6ae32021-05-30T11:14:20ZengNature Publishing GroupNature Communications2041-17232021-05-011211610.1038/s41467-021-23437-wBell-state tomography in a silicon many-electron artificial moleculeRoss C. C. Leon0Chih Hwan Yang1Jason C. C. Hwang2Julien Camirand Lemyre3Tuomo Tanttu4Wei Huang5Jonathan Y. Huang6Fay E. Hudson7Kohei M. Itoh8Arne Laucht9Michel Pioro-Ladrière10Andre Saraiva11Andrew S. Dzurak12School of Electrical Engineering and Telecommunications, The University of New South WalesSchool of Electrical Engineering and Telecommunications, The University of New South WalesSchool of Electrical Engineering and Telecommunications, The University of New South WalesInstitut Quantique et Département de Physique, Université de SherbrookeSchool of Electrical Engineering and Telecommunications, The University of New South WalesSchool of Electrical Engineering and Telecommunications, The University of New South WalesSchool of Electrical Engineering and Telecommunications, The University of New South WalesSchool of Electrical Engineering and Telecommunications, The University of New South WalesSchool of Fundamental Science and Technology, Keio UniversitySchool of Electrical Engineering and Telecommunications, The University of New South WalesInstitut Quantique et Département de Physique, Université de SherbrookeSchool of Electrical Engineering and Telecommunications, The University of New South WalesSchool of Electrical Engineering and Telecommunications, The University of New South WalesMultielectron quantum dots offer a promising platform for high-performance spin qubits; however, previous demonstrations have been limited to single-qubit operation. Here, the authors report a universal gate set and two-qubit Bell state tomography in a high-occupancy double quantum dot in silicon.https://doi.org/10.1038/s41467-021-23437-w |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Ross C. C. Leon Chih Hwan Yang Jason C. C. Hwang Julien Camirand Lemyre Tuomo Tanttu Wei Huang Jonathan Y. Huang Fay E. Hudson Kohei M. Itoh Arne Laucht Michel Pioro-Ladrière Andre Saraiva Andrew S. Dzurak |
spellingShingle |
Ross C. C. Leon Chih Hwan Yang Jason C. C. Hwang Julien Camirand Lemyre Tuomo Tanttu Wei Huang Jonathan Y. Huang Fay E. Hudson Kohei M. Itoh Arne Laucht Michel Pioro-Ladrière Andre Saraiva Andrew S. Dzurak Bell-state tomography in a silicon many-electron artificial molecule Nature Communications |
author_facet |
Ross C. C. Leon Chih Hwan Yang Jason C. C. Hwang Julien Camirand Lemyre Tuomo Tanttu Wei Huang Jonathan Y. Huang Fay E. Hudson Kohei M. Itoh Arne Laucht Michel Pioro-Ladrière Andre Saraiva Andrew S. Dzurak |
author_sort |
Ross C. C. Leon |
title |
Bell-state tomography in a silicon many-electron artificial molecule |
title_short |
Bell-state tomography in a silicon many-electron artificial molecule |
title_full |
Bell-state tomography in a silicon many-electron artificial molecule |
title_fullStr |
Bell-state tomography in a silicon many-electron artificial molecule |
title_full_unstemmed |
Bell-state tomography in a silicon many-electron artificial molecule |
title_sort |
bell-state tomography in a silicon many-electron artificial molecule |
publisher |
Nature Publishing Group |
series |
Nature Communications |
issn |
2041-1723 |
publishDate |
2021-05-01 |
description |
Multielectron quantum dots offer a promising platform for high-performance spin qubits; however, previous demonstrations have been limited to single-qubit operation. Here, the authors report a universal gate set and two-qubit Bell state tomography in a high-occupancy double quantum dot in silicon. |
url |
https://doi.org/10.1038/s41467-021-23437-w |
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