Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The devi...

Full description

Bibliographic Details
Main Authors: Giampiero de Cesare, Augusto Nascetti, Domenico Caputo
Format: Article
Language:English
Published: MDPI AG 2015-05-01
Series:Sensors
Subjects:
temperature sensors
photosensors
amorphous silicon devices
Lab-on-Chip
Online Access:http://www.mdpi.com/1424-8220/15/6/12260
id doaj-bd1a8cac6bce42879e38193f232f34e7
record_format Article
spelling doaj-bd1a8cac6bce42879e38193f232f34e72020-11-24T21:12:48ZengMDPI AGSensors1424-82202015-05-01156122601227210.3390/s150612260s150612260Amorphous Silicon p-i-n Structure Acting as Light and Temperature SensorGiampiero de Cesare0Augusto Nascetti1Domenico Caputo2Department of Information Engineering, Electronics and Telecommunications, "La Sapienza" University of Rome, via Eudossiana 18, 00184 Rome, ItalyDepartment of Astronautics, Electrical and Energetic Engineering, "La Sapienza" University of Rome, via Eudossiana 18, 00184 Rome, ItalyDepartment of Information Engineering, Electronics and Telecommunications, "La Sapienza" University of Rome, via Eudossiana 18, 00184 Rome, ItalyIn this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.http://www.mdpi.com/1424-8220/15/6/12260temperature sensorsphotosensorsamorphous silicon devicesLab-on-Chip
collection DOAJ
language English
format Article
sources DOAJ
author Giampiero de Cesare
Augusto Nascetti
Domenico Caputo
spellingShingle Giampiero de Cesare
Augusto Nascetti
Domenico Caputo
Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor
Sensors
temperature sensors
photosensors
amorphous silicon devices
Lab-on-Chip
author_facet Giampiero de Cesare
Augusto Nascetti
Domenico Caputo
author_sort Giampiero de Cesare
title Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor
title_short Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor
title_full Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor
title_fullStr Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor
title_full_unstemmed Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor
title_sort amorphous silicon p-i-n structure acting as light and temperature sensor
publisher MDPI AG
series Sensors
issn 1424-8220
publishDate 2015-05-01
description In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The device is first characterized as radiation and temperature sensor independently. We found a maximum value of responsivity equal to 350 mA/W at 510 nm and temperature sensitivity equal to 3.2 mV/K. We then investigated the effects of the temperature variation on light intensity measurement and of the light intensity variation on the accuracy of the temperature measurement. We found that the temperature variation induces an error lower than 0.55 pW/K in the light intensity measurement at 550 nm when the diode is biased in short circuit condition, while an error below 1 K/µW results in the temperature measurement when a forward bias current higher than 25 µA/cm2 is applied.
topic temperature sensors
photosensors
amorphous silicon devices
Lab-on-Chip
url http://www.mdpi.com/1424-8220/15/6/12260
work_keys_str_mv AT giampierodecesare amorphoussiliconpinstructureactingaslightandtemperaturesensor
AT augustonascetti amorphoussiliconpinstructureactingaslightandtemperaturesensor
AT domenicocaputo amorphoussiliconpinstructureactingaslightandtemperaturesensor
_version_ 1716749898426089472

Similar Items