Amorphous Silicon p-i-n Structure Acting as Light and Temperature Sensor

In this work, we propose a multi-parametric sensor able to measure both temperature and radiation intensity, suitable to increase the level of integration and miniaturization in Lab-on-Chip applications. The device is based on amorphous silicon p-doped/intrinsic/n-doped thin film junction. The devi...

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Bibliographic Details
Main Authors: Giampiero de Cesare, Augusto Nascetti, Domenico Caputo
Format: Article
Published: MDPI AG 2015-05-01
Online Access: