Investigation of the thermal tolerance of silicon-based lateral spin valves
Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si...
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doaj-bd73c5c612c549a08cdb30909f2094f92021-05-23T11:32:38ZengNature Publishing GroupScientific Reports2045-23222021-05-011111910.1038/s41598-021-90114-9Investigation of the thermal tolerance of silicon-based lateral spin valvesN. Yamashita0S. Lee1R. Ohshima2E. Shigematsu3H. Koike4Y. Suzuki5S. Miwa6M. Goto7Y. Ando8M. Shiraishi9Department of Electronic Science and Engineering, Kyoto UniversityDepartment of Electronic Science and Engineering, Kyoto UniversityDepartment of Electronic Science and Engineering, Kyoto UniversityDepartment of Electronic Science and Engineering, Kyoto UniversityAdvanced Products Development Center, TDK CorporationGraduate School of Engineering Science, Osaka UniversityGraduate School of Engineering Science, Osaka UniversityGraduate School of Engineering Science, Osaka UniversityDepartment of Electronic Science and Engineering, Kyoto UniversityDepartment of Electronic Science and Engineering, Kyoto UniversityAbstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously.https://doi.org/10.1038/s41598-021-90114-9 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
N. Yamashita S. Lee R. Ohshima E. Shigematsu H. Koike Y. Suzuki S. Miwa M. Goto Y. Ando M. Shiraishi |
spellingShingle |
N. Yamashita S. Lee R. Ohshima E. Shigematsu H. Koike Y. Suzuki S. Miwa M. Goto Y. Ando M. Shiraishi Investigation of the thermal tolerance of silicon-based lateral spin valves Scientific Reports |
author_facet |
N. Yamashita S. Lee R. Ohshima E. Shigematsu H. Koike Y. Suzuki S. Miwa M. Goto Y. Ando M. Shiraishi |
author_sort |
N. Yamashita |
title |
Investigation of the thermal tolerance of silicon-based lateral spin valves |
title_short |
Investigation of the thermal tolerance of silicon-based lateral spin valves |
title_full |
Investigation of the thermal tolerance of silicon-based lateral spin valves |
title_fullStr |
Investigation of the thermal tolerance of silicon-based lateral spin valves |
title_full_unstemmed |
Investigation of the thermal tolerance of silicon-based lateral spin valves |
title_sort |
investigation of the thermal tolerance of silicon-based lateral spin valves |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2021-05-01 |
description |
Abstract Improvement in the thermal tolerance of Si-based spin devices is realized by employing thermally stable nonmagnetic (NM) electrodes. For Au/Ta/Al electrodes, intermixing between Al atoms and Au atoms occurs at approximately 300 °C, resulting in the formation of a Au/Si interface. The Au–Si liquid phase is formed and diffuses mainly along an in-plane direction between the Si and AlN capping layers, eventually breaking the MgO layer of the ferromagnetic (FM) metal/MgO electrodes, which is located 7 µm away from the NM electrodes. By changing the layer structure of the NM electrode from Au/Ta/Al to Au/Ta, the thermal tolerance is clearly enhanced. Clear spin transport signals are obtained even after annealing at 400 °C. To investigate the effects of Mg insertion in FM electrodes on thermal tolerance, we also compare the thermal tolerance among Fe/Co/MgO, Fe/Co/Mg/MgO and Fe/Co/MgO/Mg contacts. Although a highly efficient spin injection has been reported by insertion of a thin Mg layer below or above the MgO layer, these thermal tolerances decrease obviously. |
url |
https://doi.org/10.1038/s41598-021-90114-9 |
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