Significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applications
The structural, optical, and dielectric properties of pure NiO and yttrium (Y) doped NiO (Y: NiO) were studied in the present article for optoelectronic application. The pristine and different concentrations of 1.0, 2.5, 5.0, 7.5, and 10 wt.% doped Y: NiO nanoparticles (NPs) were synthesized by flas...
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doaj-bddb571b65a64a9aa8b9c01876ab06cb2021-10-03T04:41:17ZengElsevierJournal of Materials Research and Technology2238-78542021-11-011525842600Significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applicationsKamlesh V. Chandekar0Mohd. Shkir1Aslam Khan2M.A. Sayed3Najla Alotaibi4Thamraa Alshahrani5H. Algarni6S. AlFaify7Department of Physics, Rayat Shikshan Sanstha's, Karmaveer Bhaurao Patil College, Vashi, Navi Mumbai, 400703, India; Corresponding author.Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha, 61413, Saudi Arabia; School of Science and Technology, Glocal University, Saharanpur, 247001, Uttar Pradesh, India; Corresponding author.King Abdullah Institute for Nanotechnology, King Saud University, Riyadh, 11451, Saudi Arabia; Corresponding author.Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha, 61413, Saudi Arabia; Faculty of Science, Physics Department, Al-Azhar University, Assiut, 71524, EgyptDepartment of Physics, College of Science, Princess Nourah bint Abdulrahman University, Riyadh, 11671, Saudi ArabiaDepartment of Physics, College of Science, Princess Nourah bint Abdulrahman University, Riyadh, 11671, Saudi Arabia; Corresponding author.Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha, 61413, Saudi ArabiaAdvanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha, 61413, Saudi ArabiaThe structural, optical, and dielectric properties of pure NiO and yttrium (Y) doped NiO (Y: NiO) were studied in the present article for optoelectronic application. The pristine and different concentrations of 1.0, 2.5, 5.0, 7.5, and 10 wt.% doped Y: NiO nanoparticles (NPs) were synthesized by flash combustion route. X-ray diffraction patterns (XRD), Raman spectroscopy and scanning electron microscopy (SEM) images were used to study the structural properties of as-prepared nanoparticles. The average crystallite sizes (29.8–6.7 nm) and grains size (159.2–17.9 nm) were found to be decreased with an increase in Y contents. The dislocation density (1.12–21.75 × 10−3 1/nm2), lattice strain (2.79–12.46 × 10−3) and surface area (29.48–131.13 cm2/g) were increased on increasing Y contents. Direct optical band gaps of prepared samples were estimated using the Tauc's relation in the range of 3.52–3.37 eV. Photoluminescent spectra of prepared samples exhibit spectra at 355 nm, 451–482 nm, and 493 nm emission bands, which confirm the existence of oxygen and nickel vacancies. The improvement in the dielectric constant (143), dielectric loss (1233), and loss tangent (8.67) were observed for 5.0 wt.% Y doped NiO from the dielectric analysis of the samples. The electrical conductivities of Y: NiO NPs were also improved compared to pure NiO NPs. The improvement in the optical and dielectric properties of NiO in the substitution of yttrium (Y) can be used for optoelectronics applications.http://www.sciencedirect.com/science/article/pii/S223878542101053XYttrium doped NiO NPsDielectric propertiesOptical propertiesGrain size effectOptoelectronics uses |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Kamlesh V. Chandekar Mohd. Shkir Aslam Khan M.A. Sayed Najla Alotaibi Thamraa Alshahrani H. Algarni S. AlFaify |
spellingShingle |
Kamlesh V. Chandekar Mohd. Shkir Aslam Khan M.A. Sayed Najla Alotaibi Thamraa Alshahrani H. Algarni S. AlFaify Significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applications Journal of Materials Research and Technology Yttrium doped NiO NPs Dielectric properties Optical properties Grain size effect Optoelectronics uses |
author_facet |
Kamlesh V. Chandekar Mohd. Shkir Aslam Khan M.A. Sayed Najla Alotaibi Thamraa Alshahrani H. Algarni S. AlFaify |
author_sort |
Kamlesh V. Chandekar |
title |
Significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applications |
title_short |
Significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applications |
title_full |
Significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applications |
title_fullStr |
Significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applications |
title_full_unstemmed |
Significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applications |
title_sort |
significant and systematic impact of yttrium doping on physical properties of nickel oxide nanoparticles for optoelectronics applications |
publisher |
Elsevier |
series |
Journal of Materials Research and Technology |
issn |
2238-7854 |
publishDate |
2021-11-01 |
description |
The structural, optical, and dielectric properties of pure NiO and yttrium (Y) doped NiO (Y: NiO) were studied in the present article for optoelectronic application. The pristine and different concentrations of 1.0, 2.5, 5.0, 7.5, and 10 wt.% doped Y: NiO nanoparticles (NPs) were synthesized by flash combustion route. X-ray diffraction patterns (XRD), Raman spectroscopy and scanning electron microscopy (SEM) images were used to study the structural properties of as-prepared nanoparticles. The average crystallite sizes (29.8–6.7 nm) and grains size (159.2–17.9 nm) were found to be decreased with an increase in Y contents. The dislocation density (1.12–21.75 × 10−3 1/nm2), lattice strain (2.79–12.46 × 10−3) and surface area (29.48–131.13 cm2/g) were increased on increasing Y contents. Direct optical band gaps of prepared samples were estimated using the Tauc's relation in the range of 3.52–3.37 eV. Photoluminescent spectra of prepared samples exhibit spectra at 355 nm, 451–482 nm, and 493 nm emission bands, which confirm the existence of oxygen and nickel vacancies. The improvement in the dielectric constant (143), dielectric loss (1233), and loss tangent (8.67) were observed for 5.0 wt.% Y doped NiO from the dielectric analysis of the samples. The electrical conductivities of Y: NiO NPs were also improved compared to pure NiO NPs. The improvement in the optical and dielectric properties of NiO in the substitution of yttrium (Y) can be used for optoelectronics applications. |
topic |
Yttrium doped NiO NPs Dielectric properties Optical properties Grain size effect Optoelectronics uses |
url |
http://www.sciencedirect.com/science/article/pii/S223878542101053X |
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