| Summary: | This article presents a medium voltage half-bridge circuit where 3.3 kV power switches are built with two 1.7 kV/325 A SiC MOSFETs series-connected inside power modules. Essence of this work is an active balancing method eliminating the voltage imbalances between the devices by means of gate signals modification. The advantage over commonly-used passive snubbers is low cost and limited amount of additional losses. Performance of the half-bridge is illustrated with a model-based Saber simulation at first, then, an experimental full-scale model is designed with on-the-shelf power modules capable operating at power level above 150 kVA. A series of laboratory tests at 1.5 kV DC confirmed reduction of voltage differences across devices in the stack to an acceptable level - the designed system is working correctly despite EMI caused by fast switching transients. Moreover, the observed current and voltage waveforms prove the positive impact of the method as not only voltages but also switching losses are better balanced among the devices. Experimental comparison to a 3.3 kV counterpart shows two times lower turn-off energy, therefore, the presented design with two 1.7 kV SiC MOSFET power modules can beneficently compete not only in terms of lower cost but also switching performance.
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