Room temperature ferromagnetism in thermally diffused Cr in GaN

We report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition and drive-in diffusion with Curie temperature much above 300 K. The Curie temperature increases with increasing active Cr concentration. Cr doped GaN acts as an n-type material with significant increase in elect...

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Main Authors: P. Suggisetti, D. Banerjee, R. Adari, N. Pande, T. Patil, S. Ganguly, D. Saha
Format: Article
Language:English
Published: AIP Publishing LLC 2013-03-01
Series:AIP Advances
Online Access:http://link.aip.org/link/doi/10.1063/1.4799716
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spelling doaj-bfd1bef6877a4ed49607b140dcf281382020-11-25T00:18:45ZengAIP Publishing LLCAIP Advances2158-32262013-03-013303214303214310.1063/1.4799716Room temperature ferromagnetism in thermally diffused Cr in GaNP. SuggisettiD. BanerjeeR. AdariN. PandeT. PatilS. GangulyD. SahaWe report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition and drive-in diffusion with Curie temperature much above 300 K. The Curie temperature increases with increasing active Cr concentration. Cr doped GaN acts as an n-type material with significant increase in electron carrier concentration due to the presence of Cr. Optical property of GaCrN is found to be very similar to GaN with an additional peak at 3.29 eV due to Cr. The hysteresis measurements show that the ferromagnetic ordering is maintained up to 300 K with no significant change in saturation magnetization. http://link.aip.org/link/doi/10.1063/1.4799716
collection DOAJ
language English
format Article
sources DOAJ
author P. Suggisetti
D. Banerjee
R. Adari
N. Pande
T. Patil
S. Ganguly
D. Saha
spellingShingle P. Suggisetti
D. Banerjee
R. Adari
N. Pande
T. Patil
S. Ganguly
D. Saha
Room temperature ferromagnetism in thermally diffused Cr in GaN
AIP Advances
author_facet P. Suggisetti
D. Banerjee
R. Adari
N. Pande
T. Patil
S. Ganguly
D. Saha
author_sort P. Suggisetti
title Room temperature ferromagnetism in thermally diffused Cr in GaN
title_short Room temperature ferromagnetism in thermally diffused Cr in GaN
title_full Room temperature ferromagnetism in thermally diffused Cr in GaN
title_fullStr Room temperature ferromagnetism in thermally diffused Cr in GaN
title_full_unstemmed Room temperature ferromagnetism in thermally diffused Cr in GaN
title_sort room temperature ferromagnetism in thermally diffused cr in gan
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2013-03-01
description We report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition and drive-in diffusion with Curie temperature much above 300 K. The Curie temperature increases with increasing active Cr concentration. Cr doped GaN acts as an n-type material with significant increase in electron carrier concentration due to the presence of Cr. Optical property of GaCrN is found to be very similar to GaN with an additional peak at 3.29 eV due to Cr. The hysteresis measurements show that the ferromagnetic ordering is maintained up to 300 K with no significant change in saturation magnetization.
url http://link.aip.org/link/doi/10.1063/1.4799716
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AT npande roomtemperatureferromagnetisminthermallydiffusedcringan
AT tpatil roomtemperatureferromagnetisminthermallydiffusedcringan
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