Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber Laser

Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber Laser

We have demonstrated the stable Q-switched Er-doped fluoride fiber laser with the help of the few-layered Ta<sub>2</sub>NiS<sub>5</sub> in the mid-infrared spectral range. We fabricated the mid-infrared saturable absorber mirror (SAM) by depositing the layered Ta<sub>2&...

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Main Authors: Qinwen Duan, Lingling Yang, Yuan He, Longlong Chen, Jie Li, Lili Miao, Chujun Zhao
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Photonics Journal
Subjects:
Infrared lasers
fiber lasers
Q-switched lasers
optoelectronic materials
Online Access:https://ieeexplore.ieee.org/document/9477108/
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spelling doaj-bffd15c99d744b198a026688769c236f2021-07-26T23:00:04ZengIEEEIEEE Photonics Journal1943-06552021-01-011341410.1109/JPHOT.2021.30945459477108Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber LaserQinwen Duan0Lingling Yang1Yuan He2Longlong Chen3Jie Li4Lili Miao5https://orcid.org/0000-0001-7514-8374Chujun Zhao6https://orcid.org/0000-0002-7924-9524Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, ChinaKey Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, ChinaKey Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, ChinaKey Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, ChinaKey Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, ChinaKey Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, ChinaKey Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha, ChinaWe have demonstrated the stable Q-switched Er-doped fluoride fiber laser with the help of the few-layered Ta<sub>2</sub>NiS<sub>5</sub> in the mid-infrared spectral range. We fabricated the mid-infrared saturable absorber mirror (SAM) by depositing the layered Ta<sub>2</sub>NiS<sub>5</sub> on a gold mirror. The layered Ta<sub>2</sub>NiS<sub>5</sub> exhibited saturable absorption behavior with modulation depth 36&#x0025; and saturation intensity 32.2 GW&#x002F;cm<sup>2</sup> at 2800 nm, respectively. With the Ta<sub>2</sub>NiS<sub>5</sub>-SAM, stable Q-switched pulses around 2.8 &#x03BC;m wavelength can be delivered with a pulse duration of 1.20 &#x03BC;s and a repetition rate of 102 kHz under an incident pump power of 860 mW from the ZBLAN fiber laser cavity. The experimental results confirm that Ta<sub>2</sub>NiS<sub>5</sub> has great potentials as broadband saturable absorber in mid-infrared regions, paving the way for the application of low-dimensional ternary chalcogenide in broadband optoelectronic devices.https://ieeexplore.ieee.org/document/9477108/Infrared lasersfiber lasersQ-switched lasersoptoelectronic materials
collection DOAJ
language English
format Article
sources DOAJ
author Qinwen Duan
Lingling Yang
Yuan He
Longlong Chen
Jie Li
Lili Miao
Chujun Zhao
spellingShingle Qinwen Duan
Lingling Yang
Yuan He
Longlong Chen
Jie Li
Lili Miao
Chujun Zhao
Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber Laser
IEEE Photonics Journal
Infrared lasers
fiber lasers
Q-switched lasers
optoelectronic materials
author_facet Qinwen Duan
Lingling Yang
Yuan He
Longlong Chen
Jie Li
Lili Miao
Chujun Zhao
author_sort Qinwen Duan
title Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber Laser
title_short Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber Laser
title_full Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber Laser
title_fullStr Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber Laser
title_full_unstemmed Layered Ta<sub>2</sub>NiS<sub>5</sub> Q-Switcher for Mid-Infrared Fluoride Fiber Laser
title_sort layered ta<sub>2</sub>nis<sub>5</sub> q-switcher for mid-infrared fluoride fiber laser
publisher IEEE
series IEEE Photonics Journal
issn 1943-0655
publishDate 2021-01-01
description We have demonstrated the stable Q-switched Er-doped fluoride fiber laser with the help of the few-layered Ta<sub>2</sub>NiS<sub>5</sub> in the mid-infrared spectral range. We fabricated the mid-infrared saturable absorber mirror (SAM) by depositing the layered Ta<sub>2</sub>NiS<sub>5</sub> on a gold mirror. The layered Ta<sub>2</sub>NiS<sub>5</sub> exhibited saturable absorption behavior with modulation depth 36&#x0025; and saturation intensity 32.2 GW&#x002F;cm<sup>2</sup> at 2800 nm, respectively. With the Ta<sub>2</sub>NiS<sub>5</sub>-SAM, stable Q-switched pulses around 2.8 &#x03BC;m wavelength can be delivered with a pulse duration of 1.20 &#x03BC;s and a repetition rate of 102 kHz under an incident pump power of 860 mW from the ZBLAN fiber laser cavity. The experimental results confirm that Ta<sub>2</sub>NiS<sub>5</sub> has great potentials as broadband saturable absorber in mid-infrared regions, paving the way for the application of low-dimensional ternary chalcogenide in broadband optoelectronic devices.
topic Infrared lasers
fiber lasers
Q-switched lasers
optoelectronic materials
url https://ieeexplore.ieee.org/document/9477108/
work_keys_str_mv AT qinwenduan layeredtasub2subnissub5subqswitcherformidinfraredfluoridefiberlaser
AT linglingyang layeredtasub2subnissub5subqswitcherformidinfraredfluoridefiberlaser
AT yuanhe layeredtasub2subnissub5subqswitcherformidinfraredfluoridefiberlaser
AT longlongchen layeredtasub2subnissub5subqswitcherformidinfraredfluoridefiberlaser
AT jieli layeredtasub2subnissub5subqswitcherformidinfraredfluoridefiberlaser
AT lilimiao layeredtasub2subnissub5subqswitcherformidinfraredfluoridefiberlaser
AT chujunzhao layeredtasub2subnissub5subqswitcherformidinfraredfluoridefiberlaser
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