Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2
We report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS2 bulk ceramic, about 1 mW/(mK2) at 300 K and 1.23 mW/(mK2) in a wide temperature range of 573 ∼ 673 K, of which the latter is among the highest so far for TiS2-based thermoelectric materials. Compared to TiS2, the power...
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doaj-c0d15be8029744b7b1f100c7244b146f2020-11-24T22:19:46ZengAIP Publishing LLCAIP Advances2158-32262015-04-0154047126047126-610.1063/1.4918687027504ADVEnergy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2Yulong Wang0Junfu Wen1Zhenghua Fan2Ningzhong Bao3Rong Huang4Rong Tu5Yifeng Wang6College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, ChinaCollege of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, ChinaState Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing Tech University, Nanjing 210009, ChinaState Key Laboratory of Materials-Oriented Chemical Engineering, Nanjing Tech University, Nanjing 210009, ChinaSchool of Information Science and Technology, East China Normal University, Shanghai 200062, ChinaState Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, ChinaCollege of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, ChinaWe report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS2 bulk ceramic, about 1 mW/(mK2) at 300 K and 1.23 mW/(mK2) in a wide temperature range of 573 ∼ 673 K, of which the latter is among the highest so far for TiS2-based thermoelectric materials. Compared to TiS2, the power factor is increased by ∼110% at 300 K and (50 ∼ 35)% at 573 ∼ 673 K. This enhancement is derived from a large increase in Seebeck coefficient which overwhelmed the modest degradation of electrical conductivity, which should be attributed to energy filtering induced by the band gap offset between TiS2 and PbS.http://dx.doi.org/10.1063/1.4918687 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yulong Wang Junfu Wen Zhenghua Fan Ningzhong Bao Rong Huang Rong Tu Yifeng Wang |
spellingShingle |
Yulong Wang Junfu Wen Zhenghua Fan Ningzhong Bao Rong Huang Rong Tu Yifeng Wang Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2 AIP Advances |
author_facet |
Yulong Wang Junfu Wen Zhenghua Fan Ningzhong Bao Rong Huang Rong Tu Yifeng Wang |
author_sort |
Yulong Wang |
title |
Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2 |
title_short |
Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2 |
title_full |
Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2 |
title_fullStr |
Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2 |
title_full_unstemmed |
Energy-filtering-induced high power factor in PbS-nanoparticles-embedded TiS2 |
title_sort |
energy-filtering-induced high power factor in pbs-nanoparticles-embedded tis2 |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2015-04-01 |
description |
We report on a greatly enhanced power factor for 1%PbS-nanoparticle-embedded TiS2 bulk ceramic, about 1 mW/(mK2) at 300 K and 1.23 mW/(mK2) in a wide temperature range of 573 ∼ 673 K, of which the latter is among the highest so far for TiS2-based thermoelectric materials. Compared to TiS2, the power factor is increased by ∼110% at 300 K and (50 ∼ 35)% at 573 ∼ 673 K. This enhancement is derived from a large increase in Seebeck coefficient which overwhelmed the modest degradation of electrical conductivity, which should be attributed to energy filtering induced by the band gap offset between TiS2 and PbS. |
url |
http://dx.doi.org/10.1063/1.4918687 |
work_keys_str_mv |
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1725777455118024704 |